Document Number: MRF9045N Freescale Semiconductor Rev. 12, 9/2008 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequen- MRF9045NR1 cies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. Typical Performance at 945 MHz, 28 Volts Output Power 45 Watts PEP Power Gain 19 dB 945 MHz, 45 W, 28 V Efficiency 41% (Two Tones) LATERAL N-CHANNEL IMD -31 dBc BROADBAND Integrated ESD Protection RF POWER MOSFET Guaranteed Ruggedness Load VSWR = 5:1, 28 Vdc, 945 MHz, 45 Watts CW Output Power Features Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. 200 C Capable Plastic Package CASE 1265-09, STYLE 1 N Suffix Indicates Lead-Free Terminations. RoHS Compliant. TO-270-2 TO-270-2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, PLASTIC 13 inch Reel. Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V - 0.5, +65 Vdc DSS Gate-Source Voltage V - 0.5, +15 Vdc GS Total Device Dissipation T = 25C P 177 W C D Derate above 25C 1.18 W/C Storage Temperature Range T - 65 to +150 C stg Operating Junction Temperature T 200 C J Table 2. Thermal Characteristics (1) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 0.85 C/W JC Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD 22-A113, IPC/JEDEC J-STD-020 3 260 C 1. MTTF calculator available at Table 5. Electrical Characteristics (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 65 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 1 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 2 2.8 4 Vdc GS(th) (V = 10 Vdc, I = 150 Adc) DS D Gate Quiescent Voltage V 3 3.7 5 Vdc GS(Q) (V = 28 Vdc, I = 350 mAdc) DS D Drain-Source On-Voltage V 0.22 0.4 Vdc DS(on) (V = 10 Vdc, I = 1 Adc) GS D Forward Transconductance g 4 S fs (V = 10 Vdc, I = 3 Adc) DS D Dynamic Characteristics Input Capacitance C 70 pF iss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Output Capacitance C 38 pF oss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Reverse Transfer Capacitance C 1.7 pF rss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) Two-Tone Common-Source Amplifier Power Gain G 17 19 dB ps (V = 28 Vdc, P = 45 W PEP, I = 350 mA, DD out DQ f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Drain Efficiency 38 41 % (V = 28 Vdc, P = 45 W PEP, I = 350 mA, DD out DQ f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion IMD -31 -28 dBc (V = 28 Vdc, P = 45 W PEP, I = 350 mA, DD out DQ f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss IRL -14 -9 dB (V = 28 Vdc, P = 45 W PEP, I = 350 mA, DD out DQ f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Common-Source Amplifier Power Gain G 19 dB ps (V = 28 Vdc, P = 45 W PEP, I = 350 mA, DD out DQ f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two-Tone Drain Efficiency 41 % (V = 28 Vdc, P = 45 W PEP, I = 350 mA, DD out DQ f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion IMD -31 dBc (V = 28 Vdc, P = 45 W PEP, I = 350 mA, DD out DQ f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss IRL -13 dB (V = 28 Vdc, P = 45 W PEP, I = 350 mA, DD out DQ f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) MRF9045NR1 RF Device Data Freescale Semiconductor 2 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN