Document Number: MRFE6S9205H Freescale Semiconductor Rev. 0, 10/2007 Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRFE6S9205HR3 Designed for broadband commercial and industrial applications with MRFE6S9205HSR3 frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. Typical Single-Carrier W-CDMA Performance: V = 28 Volts, I = DD DQ 880 MHz, 58 W AVG., 28 V 1400 mA, P = 58 Watts Avg., Full Frequency Band, 3GPP Test Model 1, out SINGLE W-CDMA 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal LATERAL N-CHANNEL PAR = 7.5 dB 0.01% Probability on CCDF. RF POWER MOSFETs Power Gain 21.2 dB Drain Efficiency 34% Device Output Signal PAR 6.3 dB 0.01% Probability on CCDF ACPR 5 MHz Offset -39.1 dBc in 3.84 MHz Channel Bandwidth Capable of Handling 10:1 VSWR, 32 Vdc, 880 MHz, P = 260 W CW out (3 dB Input Overdrive from Rated P ), Designed for Enhanced Ruggedness out Features 100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large-Signal Impedance Parameters Internally Matched for Ease of Use CASE 465B-03, STYLE 1 NI-880 Qualified Up to a Maximum of 32 V Operation DD MRFE6S9205HR3 Integrated ESD Protection Optimized for Doherty Applications RoHS Compliant In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. CASE 465C-02, STYLE 1 NI-880S MRFE6S9205HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain-Source Voltage V -0.5, +66 Vdc DSS Gate-Source Voltage V -0.5, +12 Vdc GS Storage Temperature Range T - 65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R C/W JC Case Temperature 80C, 202 W CW 0.27 0.33 Case Temperature 77C, 58 W CW 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22-A114) Class 1C (Minimum) Machine Model (per EIA/JESD22-A115) Class B (Minimum) Charge Device Model (per JESD22-C101) Class IV (Minimum) Table 4. Electrical Characteristics (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 66 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS Gate-Source Leakage Current I 10 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1.4 2.1 2.9 Vdc GS(th) (V = 10 Vdc, I = 600 Adc) DS D Gate Quiescent Voltage V 2.2 2.9 3.7 Vdc GS(Q) (V = 28 Vdc, I = 1400 mAdc, Measured in Functional Test) DD D Drain-Source On-Voltage V 0.1 0.2 0.3 Vdc DS(on) (V = 10 Vdc, I = 4.2 Adc) GS D (1) Dynamic Characteristics Reverse Transfer Capacitance C 1.63 pF rss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Output Capacitance C 590 pF oss (V = 28 Vdc 30 mV(rms)ac 1 MHz, V = 0 Vdc) DS GS Input Capacitance C 491 pF iss (V = 28 Vdc, V = 0 Vdc 30 mV(rms)ac 1 MHz) DS GS Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I = 1400 mA, P = 58 W Avg. W-CDMA, f = 880 MHz, DD DQ out Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth 5 MHz Offset. PAR = 7.5 dB 0.01% Probability on CCDF. Power Gain G 20 21.2 23 dB ps Drain Efficiency 32 34 % D Output Peak-to-Average Ratio 0.01% Probability on CCDF PAR 6 6.3 dB Adjacent Channel Power Ratio ACPR -39.1 -37.5 dBc Input Return Loss IRL -12.5 -8.5 dB 1. Part is internally matched on input. (continued) MRFE6S9205HR3 MRFE6S9205HSR3 RF Device Data Freescale Semiconductor 2