DocumentNumber:AFT20P060--4N FreescaleSemiconductor Rev. 1, 12/2013 TechnicalData RFPowerLDMOSTransistors N--Channel Enhancement--ModeLateral MOSFETs AFT20P060--4NR3 These 6.3 W RF power LDMOS transistors are designed for cellular base AFT20P060--4GNR3 stationapplications coveringthefrequency rangeof 1805to2170MHz. 2100MHz TypicalSingle--Carrier W--CDMA Performance: V =28Vdc, DD 18052170MHz,6.3WAVG.,28V I = 450mA, P = 6.3W Avg., Input SignalPAR = 9.9dB 0.01% DQ out AIRFASTRFPOWERLDMOS Probability onCCDF. TRANSISTORS G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2110MHz 18.6 20.0 9.4 43.0 13 2140MHz 18.8 20.0 9.2 42.5 14 2170MHz 18.9 20.0 9.1 42.5 14 OM--780--4L 1800MHz PLASTIC TypicalSingle--Carrier W--CDMA Performance: V =28Vdc, AFT20P060--4NR3 DD I = 450mA, P = 6.3W Avg., Input SignalPAR = 9.9dB 0.01% DQ out Probability onCCDF. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 1805MHz 18.8 23.0 9.5 43.0 10 OM--780G--4L 1840MHz 19.1 23.8 9.4 42.9 15 PLASTIC AFT20P060--4GNR3 1880MHz 18.7 24.5 9.1 42.9 10 Features Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation RF /V31 RF /V inA GSA outA DSA Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications InTapeandReel. R3Suffix = 250Units, 32mm TapeWidth, 13--inchReel. RF /V42 RF /V inB GSB outB DSB (TopView) Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.PinConnections FreescaleSemiconductor, Inc., 2013. All rights reserved. AFT20P060--4NR3AFT20P060--4GNR3 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature77C,6.3W CW,28Vdc,I =450mA,2140MHz 0.56 DQ CaseTemperature80C,60W CW,28Vdc,I =450mA,2140MHz 0.53 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) III Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (4) OnCharacteristics GateThresholdVoltage V 1.5 2.0 2.5 Vdc GS(th) (V =10Vdc,I =36 Adc) DS D GateQuiescentVoltage V 2.9 Vdc GS(Q) (V =28Vdc,I =450mAdc) DS D (5) FixtureGateQuiescentVoltage V 5.3 5.8 6.3 Vdc GG(Q) (V =28Vdc,I =450mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =0.36Adc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat