X-On Electronics has gained recognition as a prominent supplier of AFT20P060-4NR3 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. AFT20P060-4NR3 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

AFT20P060-4NR3 NXP

AFT20P060-4NR3 electronic component of NXP
AFT20P060-4NR3 NXP
AFT20P060-4NR3 RF MOSFET Transistors
AFT20P060-4NR3  Semiconductors

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Part No. AFT20P060-4NR3
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 65V 5-Pin OM-780 EP T/R
Datasheet: AFT20P060-4NR3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 41.5197 ea
Line Total: USD 83.04 
Availability - 0
MOQ: 2  Multiples: 1
Pack Size: 1
   
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We are delighted to provide the AFT20P060-4NR3 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AFT20P060-4NR3 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:AFT20P060--4N FreescaleSemiconductor Rev. 1, 12/2013 TechnicalData RFPowerLDMOSTransistors N--Channel Enhancement--ModeLateral MOSFETs AFT20P060--4NR3 These 6.3 W RF power LDMOS transistors are designed for cellular base AFT20P060--4GNR3 stationapplications coveringthefrequency rangeof 1805to2170MHz. 2100MHz TypicalSingle--Carrier W--CDMA Performance: V =28Vdc, DD 18052170MHz,6.3WAVG.,28V I = 450mA, P = 6.3W Avg., Input SignalPAR = 9.9dB 0.01% DQ out AIRFASTRFPOWERLDMOS Probability onCCDF. TRANSISTORS G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2110MHz 18.6 20.0 9.4 43.0 13 2140MHz 18.8 20.0 9.2 42.5 14 2170MHz 18.9 20.0 9.1 42.5 14 OM--780--4L 1800MHz PLASTIC TypicalSingle--Carrier W--CDMA Performance: V =28Vdc, AFT20P060--4NR3 DD I = 450mA, P = 6.3W Avg., Input SignalPAR = 9.9dB 0.01% DQ out Probability onCCDF. G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 1805MHz 18.8 23.0 9.5 43.0 10 OM--780G--4L 1840MHz 19.1 23.8 9.4 42.9 15 PLASTIC AFT20P060--4GNR3 1880MHz 18.7 24.5 9.1 42.9 10 Features Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation RF /V31 RF /V inA GSA outA DSA Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications InTapeandReel. R3Suffix = 250Units, 32mm TapeWidth, 13--inchReel. RF /V42 RF /V inB GSB outB DSB (TopView) Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.PinConnections FreescaleSemiconductor, Inc., 2013. All rights reserved. AFT20P060--4NR3AFT20P060--4GNR3 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature77C,6.3W CW,28Vdc,I =450mA,2140MHz 0.56 DQ CaseTemperature80C,60W CW,28Vdc,I =450mA,2140MHz 0.53 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) III Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (4) OnCharacteristics GateThresholdVoltage V 1.5 2.0 2.5 Vdc GS(th) (V =10Vdc,I =36 Adc) DS D GateQuiescentVoltage V 2.9 Vdc GS(Q) (V =28Vdc,I =450mAdc) DS D (5) FixtureGateQuiescentVoltage V 5.3 5.8 6.3 Vdc GG(Q) (V =28Vdc,I =450mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =0.36Adc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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