DocumentNumber:AFT20P140--4WN
FreescaleSemiconductor
Rev. 1, 1/2014
TechnicalData
RFPowerLDMOSTransistors
AFT20P140--4WNR3
N--Channel Enhancement--ModeLateral MOSFETs
AFT20P140--4WGNR3
This 24 W symmetrical Doherty RF power LDMOS transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability coveringthefrequency rangeof1880to2025MHz.
Typical Doherty Single--Carrier W--CDMA Performance: V =28Vdc,
DD
I = 500mA, V =0.6Vdc,P = 24W Avg., Input Signal 1880--2025MHz,24WAVG.,28V
DQA GSB out
PAR = 9.9dB @0.01%Probability onCCDF.
AIRFASTRFPOWERLDMOS
TRANSISTORS
G OutputPAR ACPR
ps D
Frequency (dB) (%) (dB) (dBc)
1880MHz 17.8 41.7 7.7 --31.0
1960MHz 17.8 41.7 7.7 --33.7
2025MHz 17.6 41.2 7.8 --34.0
Features
OM--780--4L
PLASTIC
Designedfor WideInstantaneous BandwidthApplications
AFT20P140--4WNR3
Greater NegativeGate--SourceVoltageRangefor ImprovedClass C
Operation
AbletoWithstandExtremely HighOutput VSWR andBroadbandOperating
Conditions
Designedfor Digital PredistortionError CorrectionSystems
InTapeandReel. R3Suffix = 250Units, 32mm TapeWidth, 13--inchReel.
OM--780G--4L
PLASTIC
AFT20P140--4WGNR3
Carrier
RF /V31 RF /V
inA GSA outA DSA
(1)
RF /V42 RF /V
inB GSB outB DSB
Peaking
(Top View)
Note: Exposed backside of the package is
thesourceterminalforthetransistors.
Figure1.PinConnections
1. Pinconnections 1and 2areDCcoupled
andRFindependent.
FreescaleSemiconductor, Inc., 2013--2014. All rights reserved. AFT20P140--4WNR3AFT20P140--4WGNR3
RF DeviceData
FreescaleSemiconductor, Inc. 1Table1.MaximumRatings
Rating Symbol Value Unit
Drain--Source Voltage V --0.5,+65 Vdc
DSS
Gate--SourceVoltage V --6.0,+10 Vdc
GS
Operating Voltage V 32,+0 Vdc
DD
StorageTemperatureRange T --65to+150 C
stg
CaseOperatingTemperatureRange T --40to+125 C
C
(1,2)
OperatingJunctionTemperatureRange T --40to+225 C
J
Table2.ThermalCharacteristics
(2,3)
Characteristic Symbol Value Unit
ThermalResistance,JunctiontoCase R C/W
JC
CaseTemperature74C,24W 2--CarrierW--CDMA,28Vdc,I =500mA,
DQA
V =0.6Vdc,f1=1880MHz,f2=1910MHz 0.60
GSB
CaseTemperature88C,118W 2--CarrierW--CDMA,28Vdc,I =500mA,
DQA
V =0.6Vdc,f1=1880MHz,f2=1910MHz 0.42
GSB
Table3.ESDProtectionCharacteristics
TestMethodology Class
HumanBody Model(perJESD22--A114) 2
MachineModel(perEIA/JESD22--A115) B
ChargeDeviceModel(perJESD22--C101) IV
Table4.MoistureSensitivityLevel
TestMethodology Rating PackagePeakTemperature Unit
PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C
Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted)
A
Characteristic Symbol Min Typ Max Unit
(4)
OffCharacteristics
Zero Gate Voltage Drain Leakage Current I 10 Adc
DSS
(V =65Vdc,V =0Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 5 Adc
DSS
(V =28Vdc,V =0Vdc)
DS GS
Gate--SourceLeakageCurrent I 1 Adc
GSS
(V =5Vdc,V =0Vdc)
GS DS
(5)
OnCharacteristics
(6)
GateThresholdVoltage V 0.8 1.2 1.6 Vdc
GS(th)
(V =10Vdc,I =150 Adc)
DS D
GateQuiescentVoltage V 1.3 1.9 2.3 Vdc
GSA(Q)
(V =28Vdc,I =500mAdc,MeasuredinFunctionalTest)
DD DA
(4)
Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc
DS(on)
(V =10Vdc,I =2.0Adc)
GS D
1. Continuous useat maximum temperaturewillaffect MTTF.
2. MTTFcalculatoravailableat