X-On Electronics has gained recognition as a prominent supplier of AFT20P140-4WGNR3 RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. AFT20P140-4WGNR3 RF MOSFET Transistors are a product manufactured by NXP. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

AFT20P140-4WGNR3 NXP

AFT20P140-4WGNR3 electronic component of NXP
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Part No.AFT20P140-4WGNR3
Manufacturer: NXP
Category: RF MOSFET Transistors
Description: Trans RF MOSFET N-CH 65V 5-Pin OM-780G EP T/R
Datasheet: AFT20P140-4WGNR3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
250: USD 89.5264 ea
Line Total: USD 22381.6 
Availability - 0
MOQ: 250  Multiples: 250
Pack Size: 250
   
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Operating Frequency
Gain
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Operating Temp Range
Rad Hardened
Frequency Max
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Drain Source Voltage Max
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We are delighted to provide the AFT20P140-4WGNR3 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AFT20P140-4WGNR3 and other electronic components in the RF MOSFET Transistors category and beyond.

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DocumentNumber:AFT20P140--4WN FreescaleSemiconductor Rev. 1, 1/2014 TechnicalData RFPowerLDMOSTransistors AFT20P140--4WNR3 N--Channel Enhancement--ModeLateral MOSFETs AFT20P140--4WGNR3 This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability coveringthefrequency rangeof1880to2025MHz. Typical Doherty Single--Carrier W--CDMA Performance: V =28Vdc, DD I = 500mA, V =0.6Vdc,P = 24W Avg., Input Signal 1880--2025MHz,24WAVG.,28V DQA GSB out PAR = 9.9dB @0.01%Probability onCCDF. AIRFASTRFPOWERLDMOS TRANSISTORS G OutputPAR ACPR ps D Frequency (dB) (%) (dB) (dBc) 1880MHz 17.8 41.7 7.7 --31.0 1960MHz 17.8 41.7 7.7 --33.7 2025MHz 17.6 41.2 7.8 --34.0 Features OM--780--4L PLASTIC Designedfor WideInstantaneous BandwidthApplications AFT20P140--4WNR3 Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation AbletoWithstandExtremely HighOutput VSWR andBroadbandOperating Conditions Designedfor Digital PredistortionError CorrectionSystems InTapeandReel. R3Suffix = 250Units, 32mm TapeWidth, 13--inchReel. OM--780G--4L PLASTIC AFT20P140--4WGNR3 Carrier RF /V31 RF /V inA GSA outA DSA (1) RF /V42 RF /V inB GSB outB DSB Peaking (Top View) Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.PinConnections 1. Pinconnections 1and 2areDCcoupled andRFindependent. FreescaleSemiconductor, Inc., 2013--2014. All rights reserved. AFT20P140--4WNR3AFT20P140--4WGNR3 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS Operating Voltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+125 C C (1,2) OperatingJunctionTemperatureRange T --40to+225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature74C,24W 2--CarrierW--CDMA,28Vdc,I =500mA, DQA V =0.6Vdc,f1=1880MHz,f2=1910MHz 0.60 GSB CaseTemperature88C,118W 2--CarrierW--CDMA,28Vdc,I =500mA, DQA V =0.6Vdc,f1=1880MHz,f2=1910MHz 0.42 GSB Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) IV Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (5) OnCharacteristics (6) GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =150 Adc) DS D GateQuiescentVoltage V 1.3 1.9 2.3 Vdc GSA(Q) (V =28Vdc,I =500mAdc,MeasuredinFunctionalTest) DD DA (4) Drain--SourceOn--Voltage V 0.1 0.15 0.3 Vdc DS(on) (V =10Vdc,I =2.0Adc) GS D 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
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