DocumentNumber:AFT21S230S 232S FreescaleSemiconductor Rev. 3, 3/2014 TechnicalData RFPowerLDMOSTransistors AFT21S230SR3 N--Channel Enhancement--ModeLateral MOSFETs AFT21S230--12SR3 These50WRFpowerLDMOStransistorsaredesignedforcellular basestationapplications coveringthefrequency rangeof 2110to2170MHz. AFT21S232SR3 Typical Single--Carrier W--CDMA Performance: V =28Vdc,I = 1500mA, DD DQ P = 50W Avg., Input Signal PAR = 9.9dB 0.01%Probability onCCDF. out 21102170MHz,50WAVG.,28V G OutputPAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) AIRFASTRFPOWERLDMOS TRANSISTORS 2110MHz 16.7 30.5 7.2 --35.7 --19 2140MHz 17.0 31.0 7.1 --35.4 --20 2170MHz 17.2 31.8 7.0 --34.8 --15 Features Greater NegativeGate--SourceVoltage Rangefor ImprovedClass C Operation Designedfor Digital PredistortionError CorrectionSystems Optimizedfor Doherty Applications NI--780S--2L2L, NI--780S--2L4S: R3Suffix = 250Units, 44mm TapeWidth, 13--inch Reel. NI--780S--2L: R3Suffix = 250Units, 56mm TapeWidth, 13--inchReel. For R5 Tape and Reel options, seep. 17. NI--780S--2L4S NI--780S--2L2L NI--780S--2L AFT21S230SR3 AFT21S230--12SR3 AFT21S232SR3 (1) 16 VBW (1) N.C. 4 VBW 25 1 RF /V RF /V 3 RF /V 21 in GS RF /V out DS RF /V RF /V out DS in GS out DS in GS (1) (1) N.C.34 VBW 2 VBW (Top View) (Top View) (Top View) Figure1.PinConnections Figure2.PinConnections Figure3.PinConnections 1. DevicecanoperatewiththeV current supplied throughpin 4and pin 6(AFT21S230S) DD or pin 2 and pin 4 (AFT21S230--12S) at a reduced RF output power level. Refer to CW operationdataintheMaximum Ratings table. FreescaleSemiconductor, Inc., 20122014. All rights reserved. AFT21S230SR3AFT21S230--12SR3AFT21S232SR3 RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS Operating Voltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperatureRange T --40to+150 C C (1,2) OperatingJunctionTemperatureRange T --40to+225 C J CW Operation T =25 Cwhen DCcurrent is fed through drain lead, CW C pin 5 (AFT21S230S), pin 3 (AFT21S230--12S)orpin1(AFT21S232S) 161 W Derateabove25 C 0.75 W/ C CW Operation T =25 Cwhen DCcurrent is fed through pin 4 and pin 6 CW C (AFT21S230S)orpin2andpin4(AFT21S230--12S) 104 W Derateabove25 C 0.44 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature80C,50W CW,28Vdc,I =1500mA,2110MHz 0.43 DQ (4) CaseTemperature86C, 140W CW ,28Vdc,I =1500mA,2110MHz 0.38 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2 MachineModel(perEIA/JESD22--A115) B ChargeDeviceModel(perJESD22--C101) IV Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.5 2.0 2.5 Vdc GS(th) (V =10Vdc,I =291 Adc) DS D GateQuiescentVoltage V 2.2 2.7 3.2 Vdc GS(Q) (V =28Vdc,I =1500mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =3.7Adc) GS D 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat