Document Number: AFT26P1004WS Freescale Semiconductor Rev. 1, 8/2013 Technical Data RF Power LDMOS Transistor NChannel EnhancementMode Lateral MOSFET AFT26P1004WSR3 This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz. Typical Doherty SingleCarrier WCDMA Characterization Performance: V = 28 Volts, V = 0.4 Vdc, I = 344 mA, P = 22 Watts Avg., DD GSA DQB out (1) 24962690 MHz, 22 W AVG., 28 V Input Signal PAR = 9.9 dB 0.01% Probability on CCDF. G Output PAR ACPR IRL ps D Frequency (dB) (%) (dB) (dBc) (dB) 2496 MHz 15.5 44.4 8.0 32.3 15 2590 MHz 16.1 43.5 7.8 34.9 14 2690 MHz 15.3 43.9 7.4 35.0 13 Features Designed for Wide Instantaneous Bandwidth Applications NI780S4 Greater Negative GateSource Voltage Range for Improved Class C Operation Able to Withstand Extremely High Output VSWR and Broadband Operating Conditions Peaking In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13inch Reel. RF /V RF /V 31 inA GSA outA DSA (2) RF /V42 RF /V inB GSB outB DSB Carrier (Top View) Figure 1. Pin Connections 2. Pin connections 1 and 2 are DC coupled and RF independent. 1. All characterization data measured in characterization fixture with device soldered to heat sink. Freescale Semiconductor, Inc., 2013. All rights reserved. AFT26P1004WSR3 RF Device Data Freescale Semiconductor, Inc. 1Table 1. Maximum Ratings Rating Symbol Value Unit DrainSource Voltage V 0.5, +65 Vdc DSS GateSource Voltage V 6.0, +10 Vdc GS Operating Voltage V 32, +0 Vdc DD Storage Temperature Range T 65 to +150 C stg Case Operating Temperature Range T 40 to +125 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J CW Operation T = 25C CW 195 W C Derate above 25C 2.60 W/C Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 0.60 C/W JC Case Temperature 77C, 22 W CW, 28 Vdc, V = 0.7 Vdc, GSA I = 200 mA, 2590 MHz DQB Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22A114) 2 Machine Model (per EIA/JESD22A115) B Charge Device Model (per JESD22C101) III Table 4. Electrical Characteristics (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit (4) Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V = 65 Vdc, V = 0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 5 Adc DSS (V = 28 Vdc, V = 0 Vdc) DS GS GateSource Leakage Current I 1 Adc GSS (V = 5 Vdc, V = 0 Vdc) GS DS On Characteristics (5) Gate Threshold Voltage V 0.8 1.2 1.6 Vdc GS(th) (V = 10 Vdc, I = 140 Adc) DS D Gate Quiescent Voltage V 1.3 1.8 2.1 Vdc GSB(Q) (V = 28 Vdc, I = 200 mA, Measured in Functional Test) DD DB (4) DrainSource OnVoltage V 0.1 0.15 0.3 Vdc DS(on) (V = 6 Vdc, I = 1.4 Adc) GS D 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at