X-On Electronics has gained recognition as a prominent supplier of PD54008S-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD54008S-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD54008S-E STMicroelectronics

Name: PD54008S-E
Brand: STMicroelectronics
SKU: PD54008SE_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD54008S-E electronic component of STMicroelectronics

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Part No.	PD54008S-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	Trans RF MOSFET N-CH 25V 5A 3-Pin PowerSO-10RF (Straight lead) Tube
Datasheet:	PD54008S-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

PD54008S-E More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 1 Multiples : 1	1 : USD 15.0478 10 : USD 14.0753 25 : USD 13.657 100 : USD 12.2348 400 : USD 11.4401	N/A Obsolete

0 MOQ : 50 Multiples : 50	50 : USD 10.6313	N/A Obsolete

We are delighted to provide the PD54008S-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD54008S-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 8 W with 11.5dB gain 500 MHz/7.5 V OUT New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs PowerSO-10RF latest LDMOS technology mounted in the first true (straight lead) SMD plastic RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for portable radio. Figure 1. Pin connection The PowerSO-10 plastic package, designed to Source offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Drain Gate Table 1. Device summary Order code Package Packing PD54008-E PowerSO-10RF (formed lead) Tube PD54008S-E PowerSO-10RF (straight lead) Tube PD54008TR-E PowerSO-10RF (formed lead) Tape and reel PD54008STR-E PowerSO-10RF (straight lead) Tape and reel May 2011 Doc ID 12271 Rev 3 1/29 www.st.com 29Contents PD54008-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD54008-E . 7 4.2 PD54008S-E 10 5 Test circuit 13 6 Circuit layout 15 7 Common source s-parameter 16 8 Package mechanical data 22 9 Revision history . 28 2/29 Doc ID 12271 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 5 A 5 A
Vds - Drain-Source Breakdown Voltage 25 V 25 V
Operating Frequency 1 GHz 1 GHz
Output Power 8 W (min) 8 W (min)
Configuration Single Single
Pd - Power Dissipation 73 W 73 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10RF - STRAIGHT - 4 POWERSO - 10RF - STRAIGHT - 4
Packaging Rail/Tube Rail/Tube
Vgs - Gate-Source Voltage 20 V 20 V
Series Pd54008 - E Pd54008 - E
Operating Temp Range - 65 C to 165 C - 65 C to 165 C
Screening Level Military Military
Number Of Elements 1 1
Drain Source Voltage Max 25 V 25 V
Reverse Capacitance Typ 8.5@7.5v pF 8.5@7.5v pF
Input Capacitance Typ Vds 91@7.5v pF 91@7.5v pF
Vswr Max 20(Min) 20(Min)
Output Capacitance Typ Vds 68@7.5v pF 68@7.5v pF
Mounting Surface Mount Surface Mount
Channel Type N N
Channel Mode Enhancement Enhancement
Power Gain Typ Vds 11.5 (dB) 11.5 (dB)
Drain Efficiency Typ 55( % ) 55( % )
Rad Hardened No No
Forward Transconductance Typ 2.5(S) 2.5(S)
Pin Count 3 3
Frequency Max 1000 MHz 1000 MHz
Height 3.5 mm 3.5 mm
Length 7.5 mm 7.5 mm
Width 9.4 mm 9.4 mm
Brand Stmicroelectronics Stmicroelectronics
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075