PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 8 W with 11.5dB gain 500 MHz/7.5 V OUT New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs PowerSO-10RF latest LDMOS technology mounted in the first true (straight lead) SMD plastic RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for portable radio. Figure 1. Pin connection The PowerSO-10 plastic package, designed to Source offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Drain Gate Table 1. Device summary Order code Package Packing PD54008-E PowerSO-10RF (formed lead) Tube PD54008S-E PowerSO-10RF (straight lead) Tube PD54008TR-E PowerSO-10RF (formed lead) Tape and reel PD54008STR-E PowerSO-10RF (straight lead) Tape and reel May 2011 Doc ID 12271 Rev 3 1/29 www.st.com 29Contents PD54008-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD54008-E . 7 4.2 PD54008S-E 10 5 Test circuit 13 6 Circuit layout 15 7 Common source s-parameter 16 8 Package mechanical data 22 9 Revision history . 28 2/29 Doc ID 12271 Rev 3