PD55008-E STMicroelectronics

PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 8 W with 17dB gain 500 MHz/12.5 V OUT New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. PowerSO-10RF The device boasts the excellent gain, linearity and (straight lead) reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The devices superior linearity performance makes it an ideal solution Figure 1. Pin connection for car mobile radio. Source The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers Drain Gate excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Table 1. Device summary Order code Package Packing PD55008-E PowerSO-10RF (formed lead) Tube PD55008S-E PowerSO-10RF (straight lead) Tube PD55008TR-E PowerSO-10RF (formed lead) Tape and reel PD55008STR-E PowerSO-10RF (straight lead) Tape and reel May 2010 Doc ID 12259 Rev 2 1/25 www.st.com 25Contents PD55008-E, PD55008S-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD55008-E . 7 4.2 PD54003S-E . 9 5 Test circuit 11 6 Circuit layout 13 7 Common source s-parameter 14 8 Package mechanical data 20 9 Revision history . 24 2/25 Doc ID 12259 Rev 2