X-On Electronics has gained recognition as a prominent supplier of PD55025-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD55025-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD55025-E STMicroelectronics

Name: PD55025-E
Brand: STMicroelectronics
SKU: PD55025E_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD55025-E electronic component of STMicroelectronics

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Part No.	PD55025-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	Transistors RF MOSFET RF Pwr Transistors LDMOST Plastic N Ch
Datasheet:	PD55025-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

400: USD 25.8488 ea
Line Total: USD 10339.52

Availability - 0

MOQ: 400 Multiples: 400
Pack Size: 400

PD55025-E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 28 Nov to Wed. 04 Dec MOQ : 400 Multiples : 400	400 : USD 25.8488

0 Ship by Tue. 26 Nov to Thu. 28 Nov MOQ : 1 Multiples : 1	1 : USD 32.5598

0 Ship by Thu. 28 Nov to Wed. 04 Dec MOQ : 1 Multiples : 1	1 : USD 35.1173

We are delighted to provide the PD55025-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD55025-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD55025-E PD55025S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 25 W with 14.5dB gain 500 MHz / OUT 12.5 V PowerSO-10RF New RF plastic package (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies up to 1 GHz. The device boasts the PowerSO-10RF excellent gain, linearity and reliability of STs (straight lead) latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. The devices superior linearity performance Figure 1. Pin connection makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to Source offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Drain Gate Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Table 1. Device summary Order code Package Packing PD55025-E PowerSO-10RF (formed lead) Tube PD55025S-E PowerSO-10RF (straight lead) Tube PD55015TR-E PowerSO-10RF (formed lead) Tape and reel PD55015STR-E PowerSO-10RF (straight lead) Tape and reel June 2010 Doc ID 12330 Rev 2 1/23 www.st.com 23Contents PD55025-E, PD55025S-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Test circuit 11 6 Circuit layout 12 7 Common source s-parameter 14 8 Package mechanical data 17 9 Revision history . 22 2/23 Doc ID 12330 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Ldmos Ldmos
Id - Continuous Drain Current 7 A 7 A
Vds - Drain-Source Breakdown Voltage 40 V 40 V
Operating Frequency 1 GHz 1 GHz
Gain 14.5 Db At 500 Mhz 14.5 Db At 500 Mhz
Output Power 25 W 25 W
Configuration Single Single
Pd - Power Dissipation 79 W 79 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10RF (FORMED LEAD) POWERSO - 10RF (FORMED LEAD)
Packaging Tube Tube
Vgs - Gate-Source Voltage 20 V 20 V
Series Pd55025 - E Pd55025 - E
Transistor Type Ldmos Power Ldmos Power
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 50 50
Vgs - Gate-Source Breakdown Voltage +/- 20 V +/- 20 V
Height 3.5 mm 3.5 mm
Length 7.5 mm 7.5 mm
Width 9.4 mm 9.4 mm
Channel Mode Enhancement Enhancement
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412101 85412101
Product Type Rf Mosfet Transistors Rf Mosfet Transistors
Subcategory Mosfets Mosfets
Taric 8541210000 8541210000