X-On Electronics has gained recognition as a prominent supplier of PD57002-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD57002-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD57002-E STMicroelectronics

Name: PD57002-E
Brand: STMicroelectronics
SKU: PD57002E_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD57002-E electronic component of STMicroelectronics

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Part No.	PD57002-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	STMicroelectronics RF MOSFET Transistors POWER RF Transistor
Datasheet:	PD57002-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

PD57002-E More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 400 Multiples : 400	400 : USD 7.7855	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 10.6622 10 : USD 9.8033 25 : USD 9.4007 100 : USD 8.8938 250 : USD 8.4546 500 : USD 8.1374 1000 : USD 8.0154 2500 : USD 7.4054	N/A Obsolete

0 MOQ : 4 Multiples : 1	4 : USD 8.4503	N/A Obsolete

We are delighted to provide the PD57002-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD57002-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P = 2 W with 15dB gain 960 MHz / 28 V OUT New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power PowerSO-10RF (formed lead) transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer Figure 1. Pin connection high reliability, is the first ST JEDEC approved, Source high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Drain Gate Table 1. Device summary Order code Package Packing PD57002-E PowerSO-10RF (formed lead) Tube May 2012 Doc ID 12332 Rev 4 1/19 This is information on a product in full production. www.st.com 19Contents PD57002-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Common source s-parameter 10 6 Package mechanical data 14 7 Revision history . 18 2/19 Doc ID 12332 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 0.25 A 0.25 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V
Operating Frequency 1 GHz 1 GHz
Gain 15 Db At 960 Mhz 15 Db At 960 Mhz
Output Power 2 W 2 W
Pd - Power Dissipation 4.75 W 4.75 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10RF (FORMED LEAD) POWERSO - 10RF (FORMED LEAD)
Packaging Tube Tube
Vgs - Gate-Source Voltage +/- 20 V +/- 20 V
Series Pd57002 - E Pd57002 - E
Type Rf Power Mosfet Rf Power Mosfet
Brand Stmicroelectronics Stmicroelectronics
Factory Pack Quantity : 400 400