X-On Electronics has gained recognition as a prominent supplier of PD57002-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD57002-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD57002-E STMicroelectronics

PD57002-E electronic component of STMicroelectronics
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See Product Specifications
Part No.PD57002-E
Manufacturer: STMicroelectronics
Category: RF MOSFET Transistors
Description: STMicroelectronics RF MOSFET Transistors POWER RF Transistor
Datasheet: PD57002-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 400
Multiples : 400
400 : USD 8.2961
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 11.3613
10 : USD 10.4461
25 : USD 10.0171
100 : USD 9.477
250 : USD 9.009
500 : USD 8.671
1000 : USD 8.541
2500 : USD 7.891
N/A

Obsolete
0
MOQ : 4
Multiples : 1
4 : USD 9.0044
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PD57002-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD57002-E and other electronic components in the RF MOSFET Transistors category and beyond.

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PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P = 2 W with 15dB gain 960 MHz / 28 V OUT New RF plastic package Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power PowerSO-10RF (formed lead) transistor designed for broadband commercial and industrial applications at frequencies up to 1 GHz. The device is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for digital cellular BTS applications requiring high linearity. The PowerSO-10 plastic package, designed to offer Figure 1. Pin connection high reliability, is the first ST JEDEC approved, Source high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Drain Gate Table 1. Device summary Order code Package Packing PD57002-E PowerSO-10RF (formed lead) Tube May 2012 Doc ID 12332 Rev 4 1/19 This is information on a product in full production. www.st.com 19Contents PD57002-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Common source s-parameter 10 6 Package mechanical data 14 7 Revision history . 18 2/19 Doc ID 12332 Rev 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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