X-On Electronics has gained recognition as a prominent supplier of PD57018S-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. PD57018S-E MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PD57018S-E STMicroelectronics

Name: PD57018S-E
Brand: STMicroelectronics
SKU: PD57018SE_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD57018S-E electronic component of STMicroelectronics

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Part No.	PD57018S-E
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET 8 BITS MICROCONTR
Datasheet:	PD57018S-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 23.4741 ea
Line Total: USD 23.47

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

PD57018S-E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 29 Jan to Tue. 04 Feb MOQ : 400 Multiples : 400	400 : USD 25.6195

0 Ship by Mon. 27 Jan to Wed. 29 Jan MOQ : 1 Multiples : 1	1 : USD 23.4741 10 : USD 21.8898 25 : USD 21.2581 100 : USD 19.2225 400 : USD 19.0821

0 Ship by Wed. 29 Jan to Tue. 04 Feb MOQ : 50 Multiples : 50	50 : USD 23.1988

0 Ship by Wed. 29 Jan to Tue. 04 Feb MOQ : 1 Multiples : 1	1 : USD 23.3905

We are delighted to provide the PD57018S-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD57018S-E and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 18 W with 16.5dB gain 945 MHz/28 V OUT New RF plastic package PowerSO-10RF Description (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS PowerSO-10RF technology mounted in the first true SMD plastic (straight lead) RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer Figure 1. Pin connection high reliability, is the first ST JEDEC approved, Source high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Drain Gate Table 1. Device summary Order code Package Packing PD57018-E PowerSO-10RF (formed lead) Tube PD57018S-E PowerSO-10RF (straight lead) Tube PD57018TR-E PowerSO-10RF (formed lead) Tape and reel PD57018STR-E PowerSO-10RF (straight lead) Tape and reel December 2010 Doc ID 12214 Rev 5 1/25 www.st.com 25Contents PD57018-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD57018-E . 6 4.2 PD57018S-E . 8 5 Test circuit 10 6 Circuit layout 12 7 Common source s-parameter 13 8 Package mechanical data 19 9 Revision history . 24 2/25 Doc ID 12214 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 2.5 A 2.5 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V
Rds On - Drain-Source Resistance 760 mOhms 760 mOhms
Transistor Polarity n - channel n - channel
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 165 C + 165 C
Pd - Power Dissipation 31.7 W 31.7 W
Mounting Style smd/smt smd/smt
Package / Case SOIC - 10 SOIC - 10
Packaging Tube Tube
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 20 V 20 V
Channel Mode enhancement enhancement
Configuration single single
Series pd57018 - e pd57018 - e
Transistor Type 1 n - channel 1 n - channel
Brand Stmicroelectronics Stmicroelectronics
Forward Transconductance - Min 1 s 1 s
Factory Pack Quantity : 50 50