X-On Electronics has gained recognition as a prominent supplier of LND150N8-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. LND150N8-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

LND150N8-G Microchip

LND150N8-G electronic component of Microchip
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Part No.LND150N8-G
Manufacturer: Microchip
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 500V; 0.03A; 1.6W; SOT89-3
Datasheet: LND150N8-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.7087 ea
Line Total: USD 1417.4 
Availability - 19400
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
19400
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.7087
4000 : USD 0.699
6000 : USD 0.6881
8000 : USD 0.6773
10000 : USD 0.6675
16000 : USD 0.6578

10899
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8806
25 : USD 0.7245
100 : USD 0.6687

1753
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.0719
3 : USD 0.9905
10 : USD 0.9403
20 : USD 0.8576
55 : USD 0.8101

1573
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 9
Multiples : 1
9 : USD 0.961
25 : USD 0.9447
100 : USD 0.9284
250 : USD 0.9121
500 : USD 0.8957
1000 : USD 0.8795

3880
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.7833

19400
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.8671
4000 : USD 0.8553
6000 : USD 0.8419
8000 : USD 0.8286
10000 : USD 0.8167

1753
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 78
Multiples : 1
78 : USD 0.9517
100 : USD 0.8524

3880
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 2000
Multiples : 2000
2000 : USD 0.7833

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
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Forward Transconductance - Min
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Typical Turn-On Delay Time
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We are delighted to provide the LND150N8-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LND150N8-G and other electronic components in the MOSFETs category and beyond.

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LND150 N-Channel Depletion-Mode DMOS FET Features General Description Free from secondary breakdown The LND150 is a high voltage N-channel depletion mode Low power drive requirement (normally-on) transistor utilizing Supertexs lateral DMOS Ease of paralleling technology. The gate is ESD protected. Excellent thermal stability Integral source-drain diode The LND150 is ideal for high voltage applications in the High input impedance and low C areas of normally-on switches, precision constant current ISS ESD gate protection sources, voltage ramp generation and amplication. Applications Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits Ordering Information R I Package Options DS(ON) DSS BV /BV DSX DGX Device (max) (min) (V) TO-236AB (SOT-23) TO-92 TO-243AA (SOT-89) (K) (mA) LND150 LND150K1-G LND150N3-G LND150N8-G 500 1.0 1.0 -G indicates package is RoHS compliant (Green) Pin Congurations DRAIN Absolute Maximum Ratings SOURCE Parameter Value GATE Drain-to-source BV DSX TO-92 (N3) Drain-to-gate BV DGX Gate-to-source 20V SOURCE SOURCE O O Operating and storage temperature -55 C to +150 C O Soldering temperature* 300 C DRAIN DRAIN Absolute Maximum Ratings are those values beyond which damage to the device SOURCE may occur. Functional operation under these conditions is not implied. Continuous GATE GATE operation of the device at the absolute rating level may affect device reliability. All TO-236AB (SOT-23) (K1) TO-243AA (SOT-89) (N8) voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. Product Marking S i L N YY = Year Sealed W = Code for Week Sealed D 1 5 0 W = Code for Week Sealed WW = Week Sealed N D E W L N 1 E W = Green Packaging Y Y W W = Green Packaging = Green Packaging TO-236AB (SOT-23) (K1) TO-92 (N3) TO-243AA (SOT-89) (N8) Packages may or may not include the following marks: Si or 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comLND150 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C A O O ( C/W) ( C/W) (mA) (mA) (mA) (mA) (W) TO-236AB (SOT-23) 13 30 0.36 200 350 13 30 TO-92 30 30 0.74 125 170 30 30 TO-243AA (SOT-89) 30 30 1.6 15 78 30 30 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm O Electrical Characteristics (T = 25 C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 500 - - V V = -10V, I = 1.0mA DSX GS D V Gate-to-source off voltage -1.0 - -3.0 V V = 25V, I = 100nA GS(OFF) GS D O V Change in V with temperature - - 5.0 mV/ C V = 25V, I = 100nA GS(OFF) GS(OFF) GS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 100 nA V = -10V, V = 450V GS DS I Drain-to-source leakage current V = 0.8V Max Rating, D(OFF) DS - - 100 A O V = -10V, T = 125 C GS A I Saturated drain-to-source current 1.0 - 3.0 mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - 850 1000 V = 0V, I = 0.5mA DS(ON) GS D O R Change in R with temperature - - 1.2 %/ C V = 0V, I = 0.5mA DS(ON) DS(ON) GS D G Forward transductance 1.0 2.0 - m V = 0V, I = 1.0mA FS DS D C Input capacitance - 7.5 10 ISS V = -10V, GS C Common source output capacitance - 2.0 3.5 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 0.5 1.0 RSS t Turn-on delay time - 0.09 - d(ON) V = 25V, DD t Rise time - 0.45 - r s I = 1.0mA, D t Turn-off delay time - 0.1 - d(OFF) R = 25 GEN t Fall time - 1.3 - f V Diode forward voltage drop - - 0.9 V V = -10V, I = 1.0mA SD GS SD t Reverse recovery time - 200 - ns V = -10V, I = 1.0mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit V DD 0V 90% R L INPUT PULS E 10% GENERATOR -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON ) r d(OFF) f V DD D.U.T. 10% 10% OUTPUT INPU T 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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