Supertex inc. LP0701 P-Channel Enhancement-Mode Lateral MOSFET Features General Description These enhancement-mode (normally-off) transistors utilize a Ultra-low threshold lateral MOS structure and Supertexs well-proven silicon-gate High input impedance manufacturing process. This combination produces devices Low input capacitance with the power handling capabilities of bipolar transistors Fast switching speeds and with the high input impedance and negative temperature Low on-resistance coefcient inherent in MOS devices. Freedom from secondary breakdown Low input and output leakage Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary Applications breakdown. The low threshold voltage and low on-resistance Logic level interfaces characteristics are ideally suited for hand held, battery Solid state relays operated applications. Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Ordering Information V I Package Options GS(TH) D(ON) BV /BV R DSS DGS DS(ON) Device (max) (min) (V) () 8-Lead SOIC (Narrow Body) TO-92 (V) (A) LP0701 LP0701LG-G LP0701N3-G -16.5 1.5 -1.0 -1.25 -G indicates package is RoHS compliant (Green) Pin Congurations D D D D DRAIN SOURCE G S NC NC GATE Absolute Maximum Ratings 8-Lead SOIC (LG) TO-92 (N3) Parameter Value Product Marking Drain-to-source voltage BV DSS YY = Year Sealed Drain-to-gate voltage BV YYWW DGS WW = Week Sealed P0701 L = Lot Number Gate-to-source voltage 10V L L L L = Green Packaging Operating and storage temperature -55C to +150C Package may or may not include the following marks: Si or Soldering temperature* +300C 8-Lead SOIC (LG) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All S i L P YY = Year Sealed voltages are referenced to device ground. 0 7 0 1 WW = Week Sealed Y Y W W = Green Packaging * Distance of 1.6mm from case for 10 seconds. Package may or may not include the following marks: Si or TO-92 (N3) Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comLP0701 Thermal Characteristics I I Power Dissipation D D I I jc ja DR DRM O Package (continuous) (pulsed) T = 25 C O O C ( C/W) ( C/W) (mA) (A) (mA) (A) (W) 8-Lead SOIC -700 -1.25 1.5 83 104 -700 -1.25 TO-92 -500 -1.25 1.0 125 170 -500 -1.25 Notes: I (continuous) is limited by max rated T. D j Mounted on FR4 board, 25mm x 25mm x 1.57mm Electrical Characteristics (T = 25C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -16.5 - - V V = 0V, I = -1.0mA DSS GS D V Gate threshold voltage -0.5 -0.7 -1.0 V V = V , I = -1.0mA GS GS DS D O V Change in V with temperature - - -4.0 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - -100 nA V = 10V, V = 0V GSS GS DS - - -100 nA V = -15V, V = 0V DS GS I Zero gate voltage drain current V = 0.8 Max Rating, DSS DS - - -1.0 mA O V = 0V, T = 125 C GS A - -0.4 - V = V = -2.0V GS DS I On-state drain current -0.6 -1.0 - A V = V = -3.0V D(ON) GS DS -1.25 -2.3 - V = V = -5.0V GS DS - 2.0 4.0 V = -2.0V, I = -50mA GS D Static drain-to-source on-state R - 1.7 2.0 V = -3.0V, I = -150mA DS(ON) GS D resistance - 1.3 1.5 V = -5.0V, I = -300mA GS D O R Change in R with temperature - - 0.75 %/ C V = -5.0V, I = -300mA DS(ON) DS(ON) GS D G Forward transconductance 500 700 - mmho V = -15V, I = -1.0A FS GS D C Input capacitance - 120 250 ISS V = 0V, GS C Common source output capacitance - 100 125 pF V = -15V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 40 60 RSS t Turn-on delay time - - 20 d(ON) V = -15V, DD t Rise time - - 20 r ns I = -1.25A, D t Turn-off delay time - - 30 d(OFF) R = 25 GEN t Fall time - - 30 f V Diode forward voltage drop - -1.2 -1.5 V V = 0V, I = -500mA SD GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V Pulse 10% Generator INPUT R -10V 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON ) r d(OFF) f INPU T Outpu t 0V R 90% 90% L OUTPUT 10% 10% V DD VD D Supertex inc. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2