N-CHANNEL ENHANCEMENT ZVNL110A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 100 Volt V DS *R =3 DS(on) * Low threshold voltage D G S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V 100 V DS Continuous Drain Current at T =25C I 320 mA amb D Pulsed Drain Current I 6A DM Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 700 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown BV 100 V I =1mA, V =0V DSS D GS Voltage Gate-Source Threshold V 0.75 1.5 V ID=1mA, V = V GS(th) DS GS Voltage Gate-Body Leakage I 100 nA V = 20V, V =0V GSS GS DS Zero Gate Voltage Drain I 10 A V =100 V, V =0 DSS DS GS Current 500 V =80 V, V =0V, T=125C A DS GS (2) On-State Drain Current(1) I 750 mA V =25 V, V =5V D(on) DS GS Static Drain-Source On-State R 4.5 V =5V,I =250mA DS(on) GS D Resistance (1) 3.0 V =10V, I =500mA GS D Forward Transconductance g 225 mS V =25V,I =500mA fs DS D (1)(2) Input Capacitance (2) C 75 pF iss Common Source Output C 25 pF V =25 V, V =0V, f=1MHz oss DS GS Capacitance (2) Reverse Transfer Capacitance C 8pF rss (2) Turn-On Delay Time (2)(3) t 7ns d(on) Rise Time (2)(3) t 12 ns r V 25V, V =10V, I =1A DD GS D Turn-Off Delay Time (2)(3) t 15 ns d(off) Fall Time (2)(3) t 13 ns f 3-400