Normalised RDS(on) and VGS(th) ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) gfs-For nsc ctance (mS) ward Tra ondu Gate Threshold Voltage VGS(th) N-CHANNEL ENHANCEMENT ZVN3306A ZVN3306A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 60 Volt V DS VGS=10V 9V *R =5 DSon) 1.0 10 8V 0.8 8 7V D G S 0.6 6 6V ID= E-Line 1A 0.4 5V 4 TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 4V 0.2 2 0.5A PARAMETER SYMBOL VALUE UNIT 3V 0.25A Drain-Source Voltage V 60 V DS 0 0 02 4 6 8 10 02 4 6 8 10 Continuous Drain Current at T =25C I 270 mA amb D VDS - Drain Source Voltage (Volts) VGS -Gate Source Voltage (Volts) Pulsed Drain Current I 3A DM Saturation Characteristics Voltage Saturation Characteristics Gate-Source Voltage V 20 V GS Power Dissipation at T =25C P 625 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg 1.0 10 VDS=10V ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 0.8 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 5 0.6 ID= Drain-Source Breakdown BV 60 V I =1mA, V =0V DSS D GS 1A Voltage 0.5A 0.4 0.25A Gate-Source Threshold V 0.8 2.4 V ID=1mA, V = V GS(th) DS GS 0.2 Voltage Gate-Body Leakage I 20 nA V = 20V, V =0V 1 GSS GS DS 0 11020 02 4 6 8 10 Zero Gate Voltage Drain I 0.5 V =60V, V =0 A DSS DS GS Current 50 A V =48V, V =0V, T=125C(2) VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) DS GS Transfer Characteristics On-State Drain Current(1) I 750 mA V =18V, V =10V On-resistance vs gate-source voltage D(on) DS GS Static Drain-Source On-State R 5 V =10V,I =500mA DS(on) GS D Resistance (1) 2.4 Forward Transconductance(1)(2g 150 mS V =18V,I =500mA fs DS D 200 2.2 ID=-0.5A ) 180 2.0 160 Input Capacitance (2) C 35 pF 1.8 iss 140 1.6 120 VDS=18V Common Source Output C 25 pF V =18V, V =0V, f=1MHz oss DS GS 1.4 100 Capacitance (2) 1.2 80 Reverse Transfer Capacitance C 8pF 1.0 60 rss (2) 40 0.8 20 0.6 Turn-On Delay Time (2)(3) t 5ns d(on) 0 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Rise Time (2)(3) t 7ns r V 18V, I =500mA DD D ID(on) - Drain Current (Amps) T-Temperature (C) Turn-Off Delay Time (2)(3) t 6ns d(off) Transconductance v drain current Normalised RDS(on) and VGS(th) vs Temperature Fall Time (2)(3) t 8ns f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% 3-376 3-375 ( 2) Sample test. Drain-Source Resistance RDS(on) RDS(ON) -Drain Source Resistance () VDS-Drain Source Voltage (Volts)Normalised RDS(on) and VGS(th) ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) gfs-For nsc ctance (mS) ward Tra ondu Gate Threshold Voltage VGS(th) N-CHANNEL ENHANCEMENT ZVN3306A ZVN3306A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 60 Volt V DS VGS=10V 9V *R =5 DSon) 1.0 10 8V 0.8 8 7V D G S 0.6 6 6V ID= E-Line 1A 0.4 5V 4 TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 4V 0.2 2 0.5A PARAMETER SYMBOL VALUE UNIT 3V 0.25A Drain-Source Voltage V 60 V DS 0 0 02 4 6 8 10 02 4 6 8 10 Continuous Drain Current at T =25C I 270 mA amb D VDS - Drain Source Voltage (Volts) VGS -Gate Source Voltage (Volts) Pulsed Drain Current I 3A DM Saturation Characteristics Voltage Saturation Characteristics Gate-Source Voltage V 20 V GS Power Dissipation at T =25C P 625 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg 1.0 10 VDS=10V ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb 0.8 PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. 5 0.6 ID= Drain-Source Breakdown BV 60 V I =1mA, V =0V DSS D GS 1A Voltage 0.5A 0.4 0.25A Gate-Source Threshold V 0.8 2.4 V ID=1mA, V = V GS(th) DS GS 0.2 Voltage Gate-Body Leakage I 20 nA V = 20V, V =0V 1 GSS GS DS 0 11020 02 4 6 8 10 Zero Gate Voltage Drain I 0.5 V =60V, V =0 A DSS DS GS Current 50 A V =48V, V =0V, T=125C(2) VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) DS GS Transfer Characteristics On-State Drain Current(1) I 750 mA V =18V, V =10V On-resistance vs gate-source voltage D(on) DS GS Static Drain-Source On-State R 5 V =10V,I =500mA DS(on) GS D Resistance (1) 2.4 Forward Transconductance(1)(2g 150 mS V =18V,I =500mA fs DS D 200 2.2 ID=-0.5A ) 180 2.0 160 Input Capacitance (2) C 35 pF 1.8 iss 140 1.6 120 VDS=18V Common Source Output C 25 pF V =18V, V =0V, f=1MHz oss DS GS 1.4 100 Capacitance (2) 1.2 80 Reverse Transfer Capacitance C 8pF 1.0 60 rss (2) 40 0.8 20 0.6 Turn-On Delay Time (2)(3) t 5ns d(on) 0 0.4 -80 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Rise Time (2)(3) t 7ns r V 18V, I =500mA DD D ID(on) - Drain Current (Amps) T-Temperature (C) Turn-Off Delay Time (2)(3) t 6ns d(off) Transconductance v drain current Normalised RDS(on) and VGS(th) vs Temperature Fall Time (2)(3) t 8ns f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% 3-376 3-375 ( 2) Sample test. Drain-Source Resistance RDS(on) RDS(ON) -Drain Source Resistance () VDS-Drain Source Voltage (Volts)