X-On Electronics has gained recognition as a prominent supplier of ZDX050N50 MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZDX050N50 MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZDX050N50 ROHM

Name: ZDX050N50
Brand: ROHM
SKU: ZDX050N50_ROHM
Availability: OutOfStock
Rating: 5 (11 reviews)

Images are for reference only
See Product Specifications

Part No.	ZDX050N50
Manufacturer:	ROHM
Category:	MOSFETs
Description:	Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220FM Bulk
Datasheet:	ZDX050N50 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

44: USD 0.8952 ea
Line Total: USD 39.39

Availability - 0

MOQ: 44 Multiples: 1
Pack Size: 1

ZDX050N50 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 25 Apr to Thu. 01 May MOQ : 44 Multiples : 1	44 : USD 0.8952 52 : USD 0.7632 100 : USD 0.6529

0 Ship by Fri. 25 Apr to Thu. 01 May MOQ : 34 Multiples : 1	34 : USD 0.8221

0 Ship by Fri. 25 Apr to Thu. 01 May MOQ : 34 Multiples : 1	34 : USD 0.8221

0 Ship by Fri. 25 Apr to Thu. 01 May MOQ : 42 Multiples : 1	42 : USD 0.9457 50 : USD 0.8056 100 : USD 0.6892

Specifications

Manufacturer ROHM ROHM
Product Category MOSFETs MOSFETs
Packaging Bulk Bulk
Channel Mode enhancement enhancement
Power Dissipation 40 W 40 W
Mounting through hole through hole
Operating Temperature Classification military military
Operating Temp Range - 55 C to 150 C - 55 C to 150 C
Type power mosfet power mosfet
Rad Hardened no no
Pin Count 3 + tab 3 + tab
Gate-Source Voltage Max 30 V 30 V
Polarity n n
Drain-Source On-Volt 500(v) 500(v)
Package Type TO - 220FM TO - 220FM
Number Of Elements 1 1
Continuous Drain Current 5 A 5 A

We are delighted to provide the ZDX050N50 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZDX050N50 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

ZDX050N50 Nch 500V 5A Power MOSFET Datasheet l Outline V 500V DSS TO-220FM R (Max.) 1.5W DS(on) (3) I 5A D (2) (1) P 40W D l l Features Inner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Gate-source voltage (V ) guaranteed to be 30V. (3) Source GSS 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Basic ordering unit (pcs) 500 Taping code - Marking ZDX050N50 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 500 V DSS *1 T = 25C Continuous drain current I 5 A c D *2 Pulsed drain current A I 15 D,pulse V Gate - Source voltage 30 V GSS Power dissipation (T = 25C) P 40 W c D Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.A 1/11 Not Recommended for New Designs Data Sheet ZDX050N50 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 3.125 C/W Thermal resistance, junction - ambient thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Zero gate voltage drain current I V = 500V, V = 0V - 100 mA DSS DS GS I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2.5 - 4.4 V GS (th) DS D Static drain - source *3 V = 10V, I = 2.5A R - 1.2 1.5 W GS D DS(on) on - state resistance www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.A 2/11 Not Recommended for New Designs

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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