X-On Electronics has gained recognition as a prominent supplier of ZVN4306AV MOSFETs across the USA, India, Europe, Australia, and various other global locations. ZVN4306AV MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

ZVN4306AV Diodes Incorporated

ZVN4306AV electronic component of Diodes Incorporated
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See Product Specifications
Part No.ZVN4306AV
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: N-Channel 60 V 1.1A (Ta) 850mW (Ta) Through Hole TO-92
Datasheet: ZVN4306AV Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.705 ea
Line Total: USD 1.7 
Availability - 5019
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
161
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 4000
Multiples : 4000
4000 : USD 0.7213

5019
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.705
10 : USD 1.298
100 : USD 0.9108
500 : USD 0.7425
1000 : USD 0.6886
2000 : USD 0.6875
4000 : USD 0.6578
24000 : USD 0.6567

11640
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 4000
Multiples : 4000
4000 : USD 0.7541

161
Ship by Wed. 20 Nov to Tue. 26 Nov
MOQ : 166
Multiples : 166
166 : USD 0.7517

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ZVN4306AV from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ZVN4306AV and other electronic components in the MOSFETs category and beyond.

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N-CHANNEL ENHANCEMENT ZVN4306AV MODE VERTICAL DMOS FET ISSUE 1 FEBRUARY 95 FEATURES * 60 Volt V DS *R = 0.33 DS(on) * Repetitive Avalanche Rating D APPLICATIONS G S * Solenoids / relay drivers for automotive * Stepper Motor Drivers E-Line * DC-DC convertors TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V 60 V DS Continuous Drain Current at T =25C I 1.1 A amb D Practical Continuous Drain Current at I 1.3 A DP T =25C amb Pulsed Drain Current I 15 A DM Gate Source Voltage V 20 V GS Power Dissipation at T =25C P 850 mW amb tot Practical Power Dissipation at T =25C* P 1.13 W amb totp Avalanche Current-Repetitive I 1A AR Avalanche Energy-Repetitive E 25 mJ AR Operating and Storage Temperature Range T :T -55 to +150 C j stg *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimumZVN4306AV ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). amb PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Drain-Source BV 60 V I =1mA, V =0V DSS D GS Breakdown Voltage Gate-Source V 1.3 3 V I =1mA, V =V GS(th) D DS GS Threshold Voltage Gate-Body Leakage I 100 nA V = 20V, V =0V GSS GS DS Zero Gate Voltage I 10 A V =60V, V =0 DSS DS GS Drain Current 100 A V =48V, V =0V, T=125C(2) DS GS On-State Drain I 12 A V =10V, V =10V D(on) DS GS Current(1) Static Drain-Source R 0.22 0.33 V =10V,I =3A DS(on) GS D On-State Resistance 0.32 0.45 V =5V, I =1.5A GS D (1) Forward g 700 mS V =25V,I =3A fs DS D Transconductance (1)(2) Input Capacitance (2) C 350 pF iss Common Source C 140 pF V =25 V, V =0V, f=1MHz oss DS GS Output Capacitance (2) Reverse Transfer C 30 pF rss Capacitance (2) Turn-On Delay Time t 8ns d(on) (2)(3) V 25V, V =10V, I =3A DD GEN D Rise Time (2)(3) t 25 ns r Turn-Off Delay Time t 30 ns d(off) (2)(3) Fall Time (2)(3) t 16 ns f (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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