ZVN4206GV SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Product Summary Features and Benefits Max I D Repetitive avalanche rating V Max R (BR)DSS DS(on) T = +25C A No transient protection required 60V 1A 1 V = 10V GS Characterized for 5V logic drive Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data Automotive Relay Drivers Stepper Motor Driver Case: SOT223 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (Approximate) SOT223 D G S Top View Pin Out Top-view Equivalent Circuit Ordering Information (Note 4) Part Number Compliance Case Packaging ZVN4206GVTA Standard SOT223 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZVN4206GV Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V VDSS Gate-Source Voltage 20 V V GS Continuous Drain Current 1 A I D Pulsed Drain Current 8 A I DM Continuous Drain Current 1 A I D Continuous Body Diode Current 600 mA I SD Avalanche Current - Repetitive I 600 mA AR Avalanche Energy - Repetitive E 15 mJ AR Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 2 W Power Dissipation at T = +25C P A tot Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage 60 V BVDSS ID = 1mA, VGS = 0V 10 V = 60V, V = 0V DS GS Zero Gate Voltage Drain Current I A DSS V = 48V, V = 0V , T=+125C DS GS 100 (Note 6) Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS Gate-Source Threshold Voltage V 1.3 3 V I = 1mA, V = V GS(th) D DS GS On-State Drain Current (Note 5) I 3 A V = 25V, V = 10V D(on) DS GS 1 VGS = 10V, ID = 1.5A Static Drain-Source On-State Resistance (Note 5) R DS (ON) 1.5 V = 5V, I = 0.5A GS D Forward Transconductance (Notes 5 & 6) 300 ms g V = 25V, I = 1.5A fs DS D DYNAMIC CHARACTERISTICS Input Capacitance (Note 6) 100 pF C iss V = 25 V, V = 0V DS GS Output Capacitance (Note 6) 60 pF C oss f = 1MHz Reverse Transfer Capacitance (Note 6) 20 pF C rss Turn-On Delay Time (Notes 6 & 7) t 8 ns d(on) Turn-On Rise Time (Notes 6 & 7) t 12 ns r V 25V, V = 10V DD GEN Turn-Off Delay Time (Notes 6 & 7) t 12 ns I = 1.5A d(off) D Turn-Off Fall Time (Notes 6 & 7) t 15 ns f Notes: 5. Measured under pulsed conditions. Width=300s. Duty cycle 2%. 6. Sample test. 7. Switching times measured with 50 source impedance and <5ns rise time on a pulse generator. 2 of 6 February 2015 ZVN4206GV Diodes Incorporated www.diodes.com Datasheet Number: DS33364 Rev. 4 2 NEW PRODUCT