ZXM64P02XTA Diodes Incorporated

ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =-20V R =0.090V I = -3.5A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC Converters Power Management Functions Disconnect switches Motor control S D ORDERING INFORMATION S D DEVICE REEL SIZE TAPE WIDTH (mm) QUANTITY S D (inches) PER REEL G D ZXM64P02XTA 7 12mm embossed 1000 units Top View ZXM64P02XTC 13 12mm embossed 4000 units DEVICE MARKING ZXM64P02 Issue 2 - February 2008 1 4 3 2 1 5 6 8 7ZXM64P02X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -20 V DSS Gate- Source Voltage V 12 V GS Continuous Drain Current (V =4.5V T =25C)(b) I -3.5 A GS A D (V =4.5V T =70C)(b) -2.8 GS A Pulsed Drain Current (c) I -19 A DM Continuous Source Current (Body Diode)(b) I -2.0 A S Pulsed Source Current (Body Diode)(c) I -19 A SM Power Dissipation at T =25C (a) P 1.1 W A D Linear Derating Factor 8.8 mW/C Power Dissipation at T =25C (b) P 1.8 W A D Linear Derating Factor 14.4 mW/C Operating and Storage Temperature Range T :T -55 to +150 C j stg THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R 113 C/W JA Junction to Ambient (b) R 70 C/W JA NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. Issue 2 - February 2008 2