VEC2616 Power MOSFET 60V, 80m , 3A, 60V, 137m , 2.5A, Complementary This Power MOSFET is produced using ON Semiconductors trench www.onsemi.com technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features V R (on) Max I DSS DS D Max Low On-Resistance 80m 10V N-Ch 4V drive 60V 106m 4.5V 3A Low-Profile Package 116m 4V Complementary N-Channel and P-Channel MOSFET P-Ch 137m 10V 2.5A ESD Diode-Protected Gate 60V 180m 4.5V Pb-Free, Halogen Free and RoHS compliance 194m 4V Typical Applications ELECTRICAL CONNECTION Motor Driver N-Channel and P-Channel 876 5 SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25C (Note 1) 1:Source1 Parameter Symbol N-Channel P-Channel Unit 2:Gate1 3:Source2 Drain to Source Voltage V 60 60 V DSS 4:Gate2 5:Drain2 Gate to Source Voltage V 20 20 V GSS 6:Drain2 Drain Current (DC) I 3 2.5 A D 7:Drain1 8:Drain1 Drain Current (Pulse) I 12 10 A DP PW 10s, duty cycle 1% 1234 Power Dissipation When mounted on ceramic substrate P 0.9 W PACKING TYPE : TL MARKING D 2 (900mm 0.8mm) 1unit Total Dissipation UP When mounted on ceramic substrate P 1.0 T W 2 (900mm 0.8mm) LOTNo. TL Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage ORDERING INFORMATION the device. If any of these limits are exceeded, device functionality should not See detailed ordering and shipping be assumed, damage may occur and reliability may be affected. information on page 7 of this data sheet. THERMAL RESISTANCE RATINGS Parameter SymbolValue Unit Junction to Ambient When mounted on ceramic substrate R 138.8 C/W JA 2 (900mm 0.8mm) 1unit Semiconductor Components Industries, LLC, 2015 1 Publication Order Number : October 2015 - Rev. 1 VEC2616/D VEC2616 ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2) Value Parameter Symbol Conditions Unit min typ max N-Channel Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I=1mA 1.2 2.6V GS DS D Forward Transconductance g V =10V, I=1.5A 2.6 S FS DS D R (on)1 I =1.5A, V=10V 62 80m DS D GS Static Drain to Source On-State R (on)2 I =0.75A, V =4.5V 76 106 m DS D GS Resistance R (on)3 I =0.75A, V =4V 83 116 m DS D GS Input Capacitance Ciss 505 pF Output Capacitance Coss 57 pF V =20V, f=1MHz DS Reverse Transfer Capacitance Crss 37 pF Turn-ON Delay Time t (on) 7.3 ns d Rise Time 7.5 ns t r See specified Test Circuit Turn-OFF Delay Time 41 ns t (off) d Fall Time t 22 ns f Total Gate Charge Qg 10 nC Gate to Source Charge Qgs 1.6 nC V =30V, V =10V, I =3A DS GS D Gate to Drain Miller Charge Qgd 2.1 nC V Forward Diode Voltage SD I =3A, V=0V 0.81 1.2V S GS P-Channel Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 60 V BR DSS D GS Zero-Gate Voltage Drain Current I V =60V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V (th) V =10V, I =1mA 1.2 2.6 V GS DS D Forward Transconductance g V =10V, I =1.5A 3.9 S FS DS D R (on)1 I =1.5A, V =10V 105 137m DS D GS Static Drain to Source On-State R (on)2 DS I =0.75A, V =4.5V 128 180m D GS Resistance R (on)3 DS I =0.75A, V =4V 138 194m D GS Input Capacitance Ciss 420 pF Output Capacitance Coss V =20V, f=1MHz 54 pF DS Reverse Transfer Capacitance Crss 44 pF Turn-ON Delay Time t (on) 6.4 ns d t Rise Time r 9.8 ns See specified Test Circuit Turn-OFF Delay Time t (off) d 65 ns t Fall Time f 36 ns Total Gate Charge Qg 11 nC Gate to Source Charge Qgs V =30V, V =10V, I =2.5A 1.4 nC DS GS D Gate to Drain Miller Charge Qgd 2 nC V Forward Diode Voltage SD I =2.5A, V=0V 0.83 1.2 V S GS Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2