Supertex inc. LND250 N-Channel Depletion-Mode DMOS FET Features General Description Free from secondary breakdown The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing Supertexs lateral DMOS Low power drive requirement technology. The gate is ESD protected. Ease of paralleling Excellent thermal stability The LND250 is ideal for high voltage applications in the Integral source-drain diode areas of normally-on switches, precision constant current High input impedance and low C ISS sources, voltage ramp generation and amplification. ESD gate protection Applications Solid state relays Normally-on switches Converters Power supply circuits Constant current sources Input protection circuits Ordering Information Product Summary R I BV /BV Part Number Package Options Packing DS(ON) DSS DSX DGX (V) (max) (min) LND250K1-G* TO-236AB (SOT-23) 3000/Reel 500 1.0k 1.0mA -G denotes a lead (Pb)-free / RoHS compliant package * Part is not recommended for new designs. Please refer to LND150K1-G. Pin Configuration Absolute Maximum Ratings Parameter Value SOURCE Drain-to-source BV DSX Drain-to-gate BV DGX DRAIN Gate-to-source 20V O O Operating and storage temperature -55 C to +150 C GATE Absolute Maximum Ratings are those values beyond which damage to the device may TO-236AB (SOT-23) occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Product Marking W = Code for Week Sealed NDEW = Green Packaging TO-236AB (SOT-23) Packages may or may not include the following marks: Si or Doc. DSFP-LND250 Supertex inc. B012314 www.supertex.comLND250 Thermal Characteristics I I Power Dissipation D D I I ja DR DRM O Package (continuous) (pulsed) T = 25 C A O ( C/W) (mA) (mA) (mA) (mA) (W) TO-236AB (SOT-23) 13 30 0.36 203 13 30 Notes: I (continuous) is limited by max rated T. D j O Electrical Characteristics (T = 25 C unless otherwise specified) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 500 - - V V = -10V, I = 1.0mA DSX GS D V Gate-to-source off voltage -1.0 - -3.0 V V = 25V, I = 100nA GS(OFF) GS D O V Change in V with temperature - - 5.0 mV/ C V = 25V, I = 100nA GS(OFF) GS(OFF) GS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 100 nA V = -10V, V = 450V GS DS I Drain-to-source leakage current V = 0.8V Max Rating, D(OFF) DS - - 100 A O V = -10V, T = 125 C GS A I Saturated drain-to-source current 1.0 - 3.0 mA V = 0V, V = 25V DSS GS DS R Static drain-to-source on-state resistance - 850 1000 V = 0V, I = 0.5mA DS(ON) GS D O R Change in R with temperature - - 1.2 %/ C V = 0V, I = 0.5mA DS(ON) DS(ON) GS D G Forward transductance 1.0 2.0 - mmho V = 0V, I = 1.0mA FS DS D C Input capacitance - 7.5 10 ISS V = -10V, GS C Common source output capacitance - 2.0 3.5 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 0.5 1.0 RSS t Turn-on delay time - 0.09 - d(ON) V = 25V, t Rise time - 0.45 - DD r s I = 1.0mA, D t Turn-off delay time - 0.1 - d(OFF) R = 25 GEN t Fall time - 1.3 - f V Diode forward voltage drop - - 0.9 V V = -10V, I = 1.0mA SD GS SD t Reverse recovery time - 200 - ns V = -10V, I = 1.0mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V VDD 90% INPUT Pulse R L 10% Generator -10V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) f VDD INPUT D.U.T. 10% 10% OUTPUT 90% 90% 0V Doc. DSFP-LND250 Supertex inc. B012314 2 www.supertex.com