X-On Electronics has gained recognition as a prominent supplier of TC2320TG-G MOSFETs across the USA, India, Europe, Australia, and various other global locations. TC2320TG-G MOSFETs are a product manufactured by Microchip. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TC2320TG-G Microchip

TC2320TG-G electronic component of Microchip
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See Product Specifications
Part No.TC2320TG-G
Manufacturer: Microchip
Category: MOSFETs
Description: Trans MOSFET N/P-CH Si 200V 8-Pin SOIC N T/R
Datasheet: TC2320TG-G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.892 ea
Line Total: USD 1.89 
Availability - 5899
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3126
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 250
Multiples : 1
250 : USD 1.8
500 : USD 1.7875
1000 : USD 1.7625
3300 : USD 1.75
6600 : USD 1.725
9900 : USD 1.7125

5899
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.892
25 : USD 1.661
100 : USD 1.518
3300 : USD 1.518

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs - Gate-Source Voltage
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Continuous Drain Current
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Gate-Source Breakdown Voltage
Rds On
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We are delighted to provide the TC2320TG-G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TC2320TG-G and other electronic components in the MOSFETs category and beyond.

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TC2320 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description The Supertex TC2320 consists of a high voltage, low Low threshold threshold N- and P-channel MOSFET in an 8-Lead SOIC Low on-resistance package. This low threshold enhancement-mode (normally- Low input capacitance off) transistor utilizes an advanced vertical DMOS structure Fast switching speeds and Supertexs well-proven silicon-gate manufacturing Freedom from secondary breakdown process. This combination produces a device with the Low input and output leakage power handling capabilities of bipolar transistors and Independent, electrically isolated N- and P-channels with the high input impedance and positive temperature coefcient inherent in MOS devices. Characteristic of all Applications MOS structures, this device is free from thermal runaway Medical ultrasound transmitters and thermally-induced secondary breakdown. High voltage pulsers Supertexs vertical DMOS FETs are ideally suited to a Ampliers wide range of switching and amplifying applications where Buffers very low threshold voltage, high breakdown voltage, high Piezoelectric transducer drivers input impedance, low input capacitance, and fast switching General purpose line drivers speeds are desired. Logic level interface Ordering Information R DS(ON) 8-Lead SOIC (Narrow Body) BV /BV DSS DGS (max) 4.90x3.90mm body, (V) Device () 1.75mm height (max) 1.27mm pitch N-Channel P-Channel N-Channel P-Channel TC2320 TC2320TG-G 200 -200 7.0 12 -G indicates package is RoHS compliant (Green) Pin Conguration DP DP DN DN GP Absolute Maximum Ratings SP GN Parameter Value SN Drain-to-source voltage BV 8-Lead SOIC (TG) DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V YY = Year Sealed YYWW WW = Week Sealed Operating and storage temperature -55C to +150C C2320 L = Lot Number Soldering temperature* +300C L L L L = Green Packaging Absolute Maximum Ratings are those values beyond which damage to the device Package may or may not include the following marks: Si or may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All 8-Lead SOIC (TG) voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTC2320 N-Channel Electrical Characteristics (T = 25C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 200 - - V V = 0V, I = 100A DSS GS D V Gate threshold voltage 0.6 - 2.0 V V = V , I = 1.0mA GS(th) GS DS D O V Change in V with temperature - - -4.5 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - 100 nA V = 20V, V = 0V GSS GS DS - - 1.0 A V = 0V, V = 100V GS DS V = 0V, GS - - 10.0 A I Zero gate voltage drain current V = Max rating DSS DS O V = 0V, T = 125 C GS A - - 1.0 mA V = 0.8 Max Rating DS 0.6 - - V = 4.5V, V = 25V GS DS I On-state drain current A D(ON) 1.2 - - V = 10V, V = 25V GS DS - - 8.0 V = 4.5V, I = 150mA Static drain-to-source on-state GS D R DS(ON) resistance - - 7.0 V = 10V, I = 1.0A GS D O R Change in R with temperature - - 1.0 %/ C V = 4.5V, I =150mA DS(ON) DS(ON) GS D G Forward transconductance 150 - - mmho V = 25V, I = 200mA FS DS D C Input capacitance - - 110 ISS V = 0V, GS C Common source output capacitance - - 60 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - - 23 RSS t Turn-on delay time - - 20 d(ON) V =25V, t Rise time - - 15 DD r ns I = 150mA, D t Turn-off delay time - - 25 d(OFF) R = 25 GEN t Fall time - - 25 f V Diode forward voltage drop - - 1.8 V V = 0V, I = 200mA SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 200mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. N-Channel Switching Waveforms and Test Circuit V DD 10 V 90% R L INPUT PULS E GENERATOR 10% 0V OUTPUT t t (ON) (OFF) R GEN t t t t d(ON) r d(OFF) F V DD D.U.T. 10% 10% INPU T OUTPUT 0V 90% 90% 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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