X-On Electronics has gained recognition as a prominent supplier of NTE2925 MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTE2925 MOSFETs are a product manufactured by NTE. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTE2925 NTE

NTE2925 electronic component of NTE
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See Product Specifications
Part No.NTE2925
Manufacturer: NTE
Category: MOSFETs
Description: Transistor: N-MOSFET; 800V; 6A; TO220F
Datasheet: NTE2925 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 6.6713 ea
Line Total: USD 66.71 
Availability - 0
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 10
Multiples : 1
10 : USD 6.6713
50 : USD 4.05
100 : USD 3.7368
200 : USD 3.4668
500 : USD 3.24

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 7.2731
3 : USD 6.5403
4 : USD 4.7628
10 : USD 4.4914

   
Manufacturer
Product Category
Mounting
Case
Kind Of Channel
Type Of Transistor
Drain-Source Voltage
Drain Current
On-State Resistance
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE2925 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE2925 and other electronic components in the MOSFETs category and beyond.

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NTE2925 MOSFET NCh, Enhancement Mode High Speed Switch TO220 Full Pack Type Package D Features: Low Drain Source ON Resistance: R = 1.35 Typ. DS(ON) High Forward Transfer Admittance: Y = 5.0S Typ. fs G Low Leakage Current: I = 100A Max. (V = 640V) DSS DS Enhancement Model: V = 2.0V to 4.0V (V = 10V, I = 1mA) th DS D S Absolute Maximum Ratings: (T = +25C, Note 1 unless otherwise specified) A DrainSource Voltage, V ........................................................ 800V DSS DrainGate Voltage (R = 20k), V ............................................. 800V GS DGR GateSource Voltage, V ......................................................... 30 GSS Drain Current (Note 2), I D DC ......................................................................... 6.A Pulsed ...................................................................... 18A Drain Power Dissipation (T = +25C), P ............................................ 45W C D Single Pulse Avalanche Energy (Note 3), E ....................................... 317mJ AS Avalanche Current, I ............................................................... 6A AR Repetitive Avalanche Energy (Note 4), E .......................................... 15mJ AR Channel Temperature, T ........................................................ +150 C ch Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Channel toCase, R .................................. 2.78 C/W thCH C Thermal Resistance, Channel toAmbient, R ............................... 62.5 C/W thCH A Note 1. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc. may cause this device to decrease in reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Absolute Maximum Ratings. This transistor is an electrostatic sensitive device. Please handle with caution. Note 2. Make sure that the device channel temperature is below +150 C. Note 3. V = 90V, T = +25C (Initial), L = 14.5mH, R = 25, I = 6A DD ch G AR Note 4. Repetitive rating pulse width limited by maximum channel temperature. Rev. 914Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gate Leakage Current I V = 25V, V = 0V 10 A GSS GS DS GateSource Breakdown Voltage V V = 0V, I = 10A 30 V (BR)GSS DS G Drain CutOff Current I V = 640V, V = 0V 100 A DSS DS GS DrainSource Breakdown Voltage V V = 0V, I = 10mA 800 V (BR)DSS GS D Gate Threshold Voltage V V = 10V, I = 1mA 2.0 4.0 V th DS D DrainSource OnResistance R V = 10V, I = 3A 1.35 1.7 DS(on) GS D Forward Transfer Admittance Y V = 20V, I = 3A 2.5 5.0 S fs DS D Input Capacitance C 1400 pF V = 0V, V = 25V, f = 1MHz iss GS DS Output Capacitance C 130 pF oss Reverse Transfer Capacitance C 30 pF rss TurnOn Delay Time t 80 ns V = 400V, I = 3A, R = 133, d(on) DD D L Note 5 Rise Time t 25 ns r TurnOff Delay Time t 220 ns d(off) Fall Time t 65 ns f Total Gate Charge Q 45 nC I = 6A, V = 400V, V = 10V g D DS GS GatetoSource Charge Q 25 nC gs GatetoDrain (Miller) Charge Q 20 nC gd Note 5. Duty Cycle 1%, t = 10s. w Source Drain Ratings and Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Continuous Drain Reverse Current I Note 2 6 A DR Pulsed Drain Reverse Current I Note 2 18 A DRP Diode Forward Voltage V I = 6A, V = 0V 1.7 V DSF DR GS Reverse Recovery Time t I = 6A, V = 0V, 1100 ns rr DR GS di /dt = 100A/s DR Reverse Recovery Charge Q 10 C rr Note 2. Make sure that the device channel temperature is below +150 C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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