NTE2932 MOSFET NChannel, Enhancement Mode High Speed Switch TO3PML Type Package D Features: Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge G Extended Safe Operating Area Lower R (on): 0.071 Typ DS Lower Leakage Current: 10 A (Max) V = 200V S DS Absolute Maximum Ratings: DraintoSource Voltage, V ..................................................... 200V DSS Drain Current, I D Continuous T = +25 C ............................................................. 21.3A C T = +100 C ............................................................ 13.5A C Pulsed (Note 1) ............................................................. 130A Total Power Dissipation (T = +25 C), P ............................................ 90W C D Derate Above 25 C ...................................................... 0.72W/ C GateSource Voltage, V ......................................................... 30V GS Single Pulsed Avalanche Energy (Note 2), E ...................................... 605mJ AS Avalanche Current (Note 1), I .................................................... 21.3A AR Repetitive Avalanche Energy (Note 1), E ............................................ 9mJ AR Peak Diode Recovery dv/dt (Note 3), dv/dt .......................................... 5.0V/ns Operating Junction Temperature Range, T .................................. 55 to +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Maximum Lead Temperature (During Soldering, 1/8 from case, 5sec), T .............. +300 C L Thermal Resistance, Junction toCase, R .................................... 1.38 C/W thJC Thermal Resistance, Junction toAmbient, R ................................... 40 C/W thJA Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 2mH, I = 21.3A, V = 50V, R = 27 , Starting T = +25 C. AS DD G J Rev. 1013Note 3. I 32A, di/dt 320A/ s, V V , Starting T = +25 C. SD DD (BR)DSS J