X-On Electronics has gained recognition as a prominent supplier of NTE293MP Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE293MP Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE293MP NTE

NTE293MP electronic component of NTE
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See Product Specifications
Part No.NTE293MP
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: MATCHED PAIR OF NTE293
Datasheet: NTE293MP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
20: USD 4.4362 ea
Line Total: USD 88.72 
Availability - 0
MOQ: 20  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 20
Multiples : 1
20 : USD 4.4362
50 : USD 2.8899
100 : USD 2.6676
200 : USD 2.457
500 : USD 2.2932

0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 5.4667
3 : USD 4.9185
5 : USD 3.5714
13 : USD 3.3834

   
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We are delighted to provide the NTE293MP from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE293MP and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE293 (NPN) & NTE294 (PNP) Silicon Complementary Transistors Audio Amplifier and Driver Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in lowfrequency power amplification and drive applications. Features: Low CollectorEmitter Saturation Voltage Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . 60V CBO CollectorEmitter Voltage, V 50V CEO EmitterBase Voltage, V 5V EBO Collector Current, I C Continuous . 1A Peak 1.5A Collector Power Dissipation, P 1W C Operating Junction Temperature, T . +150C J Storage Temperature Range, T 55 to +150C stg Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit CollectorBase Breakdown Voltage V I = 10 A, I = 0 60 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 2mA, I = 0 50 V (BR)CEO C B EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 20V, I = 0 0.1 A CBO CB E DC Current Gain h V = 10V, I = 500mA, Note 2 120 240 FE CE C V = 5V, I = 1A, Note 2 50 100 CE B CollectorEmitter Saturation Voltage V I = 500mA, I = 50mA, Note 2 0.2 0.4 V CE(sat) C B BaseEmitter Saturation Voltage V I = 500mA, I = 50mA, Note 2 0.85 1.2 V BE(sat) C B CurrentGain Bandwidth Product f V = 10V, I = 50mA, f = 200MHz 200 MHz T CB E Collector Output Capacitance C V = 10V, I = 0, f = 1MHz 11 20 pF ob CB e Note 1. NTE293MP is a matched pair of NTE293 with their DC Current Gain (h ) matched to within FE 10% of each other. Note 2. Pulse measurement..339 (8.62) Max Seating Plane .026 (.66) Dia Max .512 (13.0) Min E C B .100 (2.54) .200 (5.08) Max .240 (6.09) Max

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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