TC1550 N- and P-Channel Enhancement-Mode Dual MOSFET Features General Description 500V breakdown voltage The Supertex TC1550 consists of a high voltage N-channel and Independent N- and P-channels P-channel MOSFET in an 8-Lead SOIC package. This is an Electrically isolated N- and P-channels enhancement-mode (normally-off) transistor utilizing an advanced Low input capacitance vertical DMOS structure and Supertexs well-proven silicon-gate Fast switching speeds manufacturing process. This combination produces a device with Free from secondary breakdowns the power handling capabilities of bipolar transistors and with the Low input and output leakage high input impedance and positive temperature coefcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary Applications breakdown. High voltage pulsers Ampliers Supertexs vertical DMOS FETs are ideally suited to a wide range Buffers of switching and amplifying applications where very low threshold Piezoelectric transducer drivers voltage, high breakdown voltage, high input impedance, low input General purpose line drivers capacitance, and fast switching speeds are desired. Ordering Information R DS(ON) Package Option BV /BV DSS DGS (Max) Device 8-Lead SOIC N-Channel P-Channel N-Channel P-Channel 4.90x3.90mm body 1.75mm height (max) (V) (V) () () 1.27mm pitch TC1550 TC1550TG-G 500 -500 60 125 -G indicates package is RoHS compliant (Green) Pin Conguration DP DP DN DN GP Absolute Maximum Ratings SP GN SN Parameter Value 8-Lead SOIC (TG) Drain-to-source voltage BV DSS (top view) Drain-to-gate voltage BV DGS Gate-to-source voltage 20V Product Marking Operating and storage temperature -55C to + 150C YY = Year Sealed YYWW * WW = Week Sealed Soldering temperature 300C C1550 L = Lot Number Absolute Maximum Ratings are those values beyond which damage to the device L L L L = Green Packaging may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All 8-Lead SOIC (TG) voltages are referenced to device ground. * Distance of 1.6mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTC1550 N-Channel Electrical Characteristics (T = 25C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage 500 - - V V = 0V, I = 1.0mA DSS GS D V Gate threshold voltage 2.0 - 4.0 V V = V , I =1.0mA GS(th) GS DS D O V Change in V with temperature - -3.8 -5.0 mV/ C V = V , I = 1.0mA GS(th) GS(th) GS DS D I Gate body leakage current - - 100 nA V = 20V, V = 0V GSS GS DS - - 10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current DSS V = 0.8 Max Rating, DS - - 1.0 mA V = 0V, T = 125C GS A - 100 - V = 5.0V, V = 25V GS DS I On-state drain current mA D(ON) 150 350 - V = 10V, V = 25V GS DS - 45 - V = 5.0V, I = 50mA Static drain-to-source GS D R DS(ON) on-state resistance - 40 60 V = 10V, I = 50mA GS D O R Change in R with temperature - 1.0 1.7 %/ C V = 10V, I = 50mA DS(ON) DS(ON) GS D G Forward transconductance 50 100 - mmho V = 25V, I =50mA FS DS D C Input capacitance - 45 55 ISS V = 0V, GS C Common source output capacitance - 8.0 10 pF V = 25V, OSS DS f = 1.0MHz C Reverse transfer capacitance - 2.0 5.0 RSS t Turn-on delay time - - 10 d(ON) V = 25V, t Rise time - - 15 DD r ns I = 150mA, D t Turn-off delay time - - 10 d(OFF) R = 25 GEN t Fall time - - 10 f V Diode forward voltage drop - 0.8 - V V = 0V, I = 500mA SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = 500mA rr GS SD Notes: 1. All DC parameters 100% tested at 25C unless otherwise stated. (Pulsed test: 300s pulse at 2% duty cycle.) 2. All AC parameters sample tested. N-Channel Switching Waveforms and Test Circuit V DD 10V 90% R L Input Pulse OUTPUT Generator 10% 0V t t (ON) (OFF) R GEN D.U.T. t t t t d(ON) r d(OFF) f V DD Input 10% 10% Output 90% 90% 0V 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2