PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 60 W with 14.3dB gain 945 MHz/28 V OUT New RF plastic package Description PowerSO-10RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PowerSO-10RF Devices superior linearity performance makes it (straight lead) an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been Figure 1. Pin connection specially optmized for RF needs and offers Source excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Drain Gate Table 1. Device summary Order code Package Packing PD57060-E PowerSO-10RF (formed lead) Tube PD57060S-E PowerSO-10RF (straight lead) Tube PD57060TR-E PowerSO-10RF (formed lead) Tape and reel PD57060STR-E PowerSO-10RF (straight lead) Tape and reel June 2010 Doc ID 11758 Rev 4 1/21 www.st.com 21Contents PD57060-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedances 5 4 Typical performance . 6 5 Test circuit . 9 6 Common source s-parameter 12 7 Package mechanical data 15 8 Revision history . 20 2/21 Doc ID 11758 Rev 4