2SK3075(TE12L,Q) Toshiba

2SK3075 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3075 RF Power MOSFET for VHF and UHFBand Power Amplifier Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. z Output Power : P 7.5W O z Power Gain : G 11.7dB P z Drain Efficiency : 50% D Absolute Maximum Ratings (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 25 V GSS Drain Current I 5 A D Drain Power Dissipation P 20 W D* JEDEC JEITA Channel Temperature T 150 C ch TOSHIBA 25N1A Storage Temperature Range T 45~150 C stg Weight: 0.08 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Tc = 25C When mounted on a 1.6mm glass epoxy PCB Marking 1 2007-11-01 2SK3075 Electrical Characteristics (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAXUNIT Output Power P 7.5 V = 9.6V W O DS Iidle = 50mA (V = adjust) GS Drain Efficiency 50 % D f = 520MHz, P = 500mW i Power Gain G 11.7 dB P Gate Threshold Voltage V V = 9.6V, I = 0.5mA 1.0 1.5 2.0 V th DS D Drain Cut-off Current I V = 20V, V = 0 10 A DSS DS GS Gate-Source Leakage Current I V = 10V, V = 0 5 A GSS GS DS Handling Precaution When handling individual devices, be sure that working desks, human bodies and soldering iron are protected against electrostatic electricity. RF Output Power Test Fixture 2 2007-11-01