2SK3471 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3471 Switching Regulator and DC-DC Converter Applications Unit: mm Low drain-source ON-resistance: R = 10 (typ.) DS (ON) High forward transfer admittance: Y = 0.4 S (typ.) fs Low leakage current: I = 100 A (max) (V = 500 V) DSS DS Enhancement model: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 500 V DSS Drain-gate voltage (R = 20 k) V 500 V GS DGR Gate-source voltage V 30 V GSS DC (Note 1) I 0.5 D Drain current A Pulse (Note 1) I 1.5 DP Drain power dissipation P 0.5 W D Drain power dissipation (Note 2) P 1.5 W JEDEC D Single pulse avalanche energy JEITA SC-62 E 14.3 mJ AS (Note 3) TOSHIBA 2-5K1B Avalanche current I 0.5 A AR Weight: 0.05 g (typ.) Repetitive avalanche energy (Note 4) E 0.05 mJ AR Channel temperature T 150 C ch Storage temperature range T 55 to150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient R 250 C/W th (ch-a) Note 1: Ensure that the channel temperature does not exceed 150C Note 2: Mounted on a ceramic substrate (25.4 mm 25.4 mm 0.8 mm) Note 3: V = 90 V, T = 25C (initial), L = 100 mH, R = 25 , I = 0.5 A DD ch G AR Note 4: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. Start of commercial production 2000-06 1 2013-11-01 2SK3471 Marking Note 5: A line beside a Lot No. identifies the indication of product Part No. Labels. (or abbreviation code) Without a line: Pb /INCLUDES > MCV With a line: G /RoHS COMPATIBLE or G /RoHS Pb Z G Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Note 5 The RoHS is the Directive 2011/65/EU of the European Parliament Lot No. and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. = Electrical Characteristics (Ta 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 25 V, V = 0 V 10 A GSS GS DS Gate-source breakdown voltage V I = 10 A, V = 0 V 30 V (BR) GSS G DS Drain cut-OFF current I V = 500 V, V = 0 V 100 A DSS DS GS Drain-source breakdown voltage V I = 10 mA, V = 0 V 500 V (BR) DSS D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON resistance R V = 10 V, I = 0.25 A 10 18 DS (ON) GS D Y V = 10 V, I = 0.25 A 0.2 0.4 S Forward transfer admittance fs DS D Input capacitance C 75 iss Reverse transfer capacitance C V = 10 V, V = 0 V, f = 1 MHz 7 pF rss DS GS C 24 Output capacitance oss 10 V I = 0.25 A D Rise time t 11 r V GS V OUT 0 V Turn-ON time t 18 on R = 1 k L Switching time ns Fall time t 54 f V 250 V DD Turn-OFF time t 95 Duty 1%, t = 10 s off w Total gate charge Q 3.8 g (gate-source plus gate-drain) V 400 V, V = 10 V, I = 0.5 A nC DD GS D Q Gate-source charge 1.9 gs Q 1.9 Gate-drain (miller) charge gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current (Note 1) I 0.5 A DR Pulse drain reverse current (Note 1) I 1.5 A DRP Forward voltage (diode) V I = 0.5 A, V = 0 V 1.5 V DSF DR GS Reverse recovery time t I = 0.5 A, V = 0 V, 190 ns rr DR GS dI /dt = 100 A / s Reverse recovery charge Q 380 nC rr DR 2 2013-11-01 4.7