X-On Electronics has gained recognition as a prominent supplier of 2SK3569 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SK3569 MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SK3569 Toshiba

Name: 2SK3569
Brand: Toshiba
SKU: 2SK3569_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	2SK3569
Manufacturer:	Toshiba
Category:	MOSFETs
Description:	MOSFET N Trench 600V 10A 4V @ 1mA 750 mÎ© @ 5A,10V TO-220F (TO-220IS) RoHS
Datasheet:	2SK3569 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.4253 ea
Line Total: USD 2.43

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

2SK3569 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 25 Mar to Fri. 28 Mar MOQ : 1 Multiples : 1	1 : USD 2.4253 10 : USD 1.7938 50 : USD 1.4614 100 : USD 1.3066 500 : USD 1.2353 1000 : USD 1.203 2000 : USD 1.1886

Specifications

Manufacturer Toshiba Toshiba
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO - 220F (TO - 220IS) TO - 220F (TO - 220IS)
Brand Category Toshiba Toshiba
Fet Type n trench n trench
Drain To Source Voltagevdss 600 V 600 V
Continuous Drain Current Id @ 25°C 10 A 10 A
Vgsth Max @ Id 4v @ 1m A 4v @ 1m A
Rds On Max @ Id Vgs 750 m @ 5a,10v 750 m @ 5a,10v
Power Dissipation-Max Ta 45 W 45 W
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 10 A 10 A
Drain Source On Resistance Rdson@Vgs Id 750 mOhms @10V , 5A 750 mOhms @10V , 5A
Power Dissipation Pd 45 W 45 W
Gate Threshold Voltage Vgsth@Id 4 V @1 mA 4 V @1 mA
Type N Channel N Channel

We are delighted to provide the 2SK3569 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK3569 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The 2SK3569 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Toshiba. It is a N-channel enhancement type MOSFET with a drain-source breakdown voltage of 600 V, a maximum drain current of 10 A (also known as On-state current), a gate threshold voltage of 4 V (@ 1 mA drain current), a drain-source on-state resistance of 750 mO (@ 5A drain current), and a maximum drain-source voltage of 10 V. It is designed to come with an International Standard TO-220F (also known as TO-220IS) case with a RoHS compliant lead finish. This MOSFET can be used for various applications that require high-power switching including DC-DC converters, motor controls, power supplies, and other types of power management applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

TOSHIBA LED LIGHTING may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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