2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Unit: mm Motor Drive Applications Low drain-source ON resistance: R = 4.7 m (typ.) DS (ON) High forward transfer admittance: Y = 88 S (typ.) fs Low leakage current: I = 100 A (max) (V = 60 V) DSS DS Enhancement model: V = 2.0 to 4.0 V (V = 10 V, I = 1 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Drain-gate voltage (R = 20 k) V 60 V GS DGR Gate-source voltage V 20 V GSS 1. GATE DC (Note 1) I 70 D 2. DRAIN (HEAT SINK) Drain current A 3. SOURCE Pulse (Note 1) I 280 DP Drain power dissipation (Tc = 25C) P 125 W D JEDEC Single pulse avalanche energy E 328 mJ AS (Note 2) JEITA Avalanche current I 70 A TOSHIBA 2-16C1B AR Repetitive avalanche energy (Note 3) E 12.5 mJ AR Weight: 4.6 g (typ.) Channel temperature T 150 C ch Storage temperature range T 55 to150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.0 C/W th (ch-c) Thermal resistance, channel to ambient R 50 C/W th (ch-a) Note 1: Ensure that the channel temperature does not exceed 150. 1 Note 2: V = 25 V, T = 25C (initial), L = 91 H, R = 25 , I = 70 A DD ch G AR Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 1 2009-09-29 2SK3845 = Electrical Characteristics (Ta 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 16 V, V = 0 V 10 A GSS GS DS Drain cut-OFF current I V = 60V, V = 0 V 100 A DSS DS GS V I = 10mA, V = 0 V 60 (BR) DSS D GS Drain-source breakdown voltage V V I = 10mA, V = 20 V 35 (BR) DSX D GS Gate threshold voltage V V = 10 V, I = 1 mA 2.0 4.0 V th DS D Drain-source ON resistance R V = 10 V, I = 35 A 4.7 5.8 m DS (ON) GS D Y V = 10 V, I = 35 A 44 88 S Forward transfer admittance fs DS D Input capacitance C 12400 iss Reverse transfer capacitance C V = 10 V, V = 0 V, f = 1 MHz 700 pF rss DS GS C 1100 Output capacitance oss 10 V I = 35 A D Rise time t 17 r V GS V OUT 0 V Turn-on time t 44 on R = 0.86 L Switching time ns Fall time t 35 f V 30 V DD Turn-off time t 200 Duty 1%, t = 10 s off w Total gate charge Q 196 g (gate-source plus gate-drain) V 48 V, V = 10 V, I = 70 A nC DD GS D Q Gate-source charge 148 gs Q 48 Gate-drain (miller) charge gd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Continuous drain reverse current (Note 1) I 70 A DR Pulse drain reverse current (Note 1) I 280 A DRP Forward voltage (diode) V I = 70 A, V = 0 V 1.5 V DSF DR GS Reverse recovery time t I = 70 A, V = 0 V, 70 ns rr DR GS dI /dt = 50 A/s Reverse recovery charge Q 77 nC rr DR Marking Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV TOSHIBA Underlined: G /RoHS COMPATIBLE or G /RoHS Pb K3845 Part No. (or abbreviation code) Lot No. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Note 4 The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 50