2SK4037 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK4037 470 MHz Band Amplifier Applications Unit: mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output power: P = 36.5dBmW (typ) o Gain: G = 11.5dB (typ) p Drain Efficiency: D = 60.0% (typ) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 12 V DSS Gate-source voltage V (Note 1) 3 V GSS Drain current I 3 A D Power dissipation P (Note 2) 20 W D JEDEC Channel temperature T 150 C ch JEITA Storage temperature range T 45 to 150 C stg TOSHIBA 2-5N1A Note: Using continuously under heavy loads (e.g. the application of Weight: 0.08 g (typ.) high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Operating Ranges: 0 to 3V Note 2: Tc = 25C (When mounted on a 0.8 mm glass epoxy PCB) Marking Type Name UE F ** Dot Lot No. Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. Start of commercial production 2005-01 1 2014-03-01 2SK4037 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Output power P 35.5 36.5 dBmW O V = 6.0 V, Iidle = 250 mA DS (V = adjust) GS Drain efficiency 55.0 60.0 % D f = 470 MHz, P = 25dBmW i Power gain G 10.5 11.5 dB p Z = Z = 50 G L Threshold voltage V V = 6.0 V, I = 0.5 mA 1.0 1.5 V th DS D Drain cut-off current I V = 12 V, V = 0 V 10 A DSS DS GS Gate-source leakage current I V = 3V, V = 0 V 5 A GSS GS DS V = 6.0 V, f = 470 MHz, DS P = 25dBmW, i Load mismatch (Note 3) No degradation P = 36.5dBmW (V = adjust) o GS VSWR LOAD 10:1 all phase Note 3: These characteristic values are measured using measurement tools specified by Toshiba. Test Circuit P 2200 pF P 2200 pF i o Z = 50 Z = 50 G L L1 L2 5 pF 27 pF 5 pF 5 pF 27 pF 16 pF 10000 pF 10 F 10000 pF 680 k V V GS DS L1: 0.6 mm enamel wire, 5.8ID, 8T L2: 0.6 mm enamel wire, 5.8ID, 8T Line: 2mm 2 2014-03-01