X-On Electronics has gained recognition as a prominent supplier of 2SK880-BL(TE85L,F) JFET across the USA, India, Europe, Australia, and various other global locations. 2SK880-BL(TE85L,F) JFET are a product manufactured by Toshiba. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

2SK880-BL(TE85L,F) Toshiba

2SK880-BL(TE85L,F) electronic component of Toshiba
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Part No.2SK880-BL(TE85L,F)
Manufacturer: Toshiba
Category: JFET
Description: JFET N-CH FET 1.0dB AMP AUDIO -50 VGDS 10mA
Datasheet: 2SK880-BL(TE85L,F) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
47: USD 0.876 ea
Line Total: USD 41.17 
Availability - 2298
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 47  Multiples: 1
Pack Size: 1
Availability Price Quantity
2298
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 47
Multiples : 1
47 : USD 0.876
76 : USD 0.5412
117 : USD 0.3495
200 : USD 0.3478
500 : USD 0.2682
1000 : USD 0.2422
2000 : USD 0.2405

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Series
Drain Source Voltage Vds
Brand
Continuous Drain Current
Drain-Source Current At Vgs 0
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Power Dissipation
Input Capacitance
Maximum Drain Gate Voltage
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SK880-BL(TE85L,F) from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK880-BL(TE85L,F) and other electronic components in the JFET category and beyond.

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2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit: mm High Y : Y = 15 mS (typ.) at V = 10 V, V = 0 fs fs DS GS High breakdown voltage: V = 50 V GDS Low noise: NF = 1.0dB (typ.) at V = 10 V, I = 0.5 mA, f = 1 kHz, R = 1 k DS D G High input impedance: I = 1 nA (max) at V = 30 V GSS GS Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Gate-drain voltage V 50 V GDS Gate current I 10 mA G Drain power dissipation P 100 mW D Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA SC-70 Please design the appropriate reliability upon reviewing the TOSHIBA 2-2E1B Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual Weight: 0.006 g (typ.) reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate cut-off current I V = 30 V, V = 0 1.0 nA GSS GS DS Gate-drain breakdown voltage V V = 0, I = 100 A 50 V (BR) GDS DS G I DSS Drain current V = 10 V, V = 0 1.2 14.0 mA DS GS (Note) Gate-source cut-off voltage V V = 10 V, I = 0.1 A 0.2 1.5 V GS (OFF) DS D Forward transfer admittance Y V = 10 V, V = 0, f = 1 kHz 4.0 15 mS fs DS GS Input capacitance C V = 10 V, V = 0, f = 1 MHz 13 pF iss DS GS Reverse transfer capacitance C V = 10 V, I = 0, f = 1 MHz 3 pF rss DG D V = 10 V, R = 1 k DS G NF (1) 5 I = 0.5 mA, f = 10 Hz D Noise figure dB V = 10 V, R = 1 k DS G NF (2) 1 I = 0.5 mA, f = 1 kHz D Note: I classification Y: 1.2 to 3.0 mA, GR: 2.6 to 6.5 mA, BL: 6.0 to 14 mA DSS Marking Start of commercial production 1987-05 1 2014-03-01 2SK880 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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TOSHIBA SEMICONDUCTORS
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