Ordering number : ENA1285B TF202THC N-Channel JFET TF202THC Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Gate to Drain Breakdown Voltage V I =--100A --20 V (BR)GDO G Cutoff Voltage V V =5V, I =1A --0.2 --0.6 --1.0 V GS(off) DS D Drain Current I V =5V, V =0V 140* 350* A DSS DS GS Forward Transfer Admittance yfs V =5V, V =0V, f=1kHz 0.5 1.0 mS DS GS Input Capacitance Ciss V =5V, V =0V, f=1MHz 3.5 pF DS GS Reverse Transfer Capacitance Crss V =5V, V =0V, f=1MHz 0.65 pF DS GS Ta=25C, V =4.5V, R =1k , Cin=15pF, See speci ed Test Circuit. CC L Voltage Gain GV V =10mV, f=1kHz --3.0 dB IN Reduced Voltage Characteristic GVV V =10mV, f=1kHz, V =4.5V 1.5V --1.2 --3.5 dB IN CC Frequency Characteristic Gvf f=1kHz to 110Hz --1.0 dB Input Impedance Z f=1kHz 25 M IN Output Impedance Z f=1kHz 1000 O Total Harmonic Distortion THD V =30mV, f=1kHz 1.2 % IN Output Noise Voltage V V =0V, A Curve --110 dB NO IN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. * : The TF202THC is classi ed by I as follows : (unit : A) DSS Rank 4 5 I 140 to 240 210 to 350 DSS Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 1k V =4.5V CC V =1.5V CC 15pF 33F + V VTVM THD B A OSC Output Impedance Ordering Information Device Package Shipping memo TF202THC-4-TL-H VTFP 8,000pcs./reel Pb Free and Halogen Free TF202THC-5-TL-H VTFP 8,000pcs./reel No. A1285-2/6