Ordering number : ENA0842A TF252TH N-Channel JFET TF252TH Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Gate-to-Drain Breakdown Voltage V I =--100 A --20 V (BR)GDO G Cutoff Voltage V (off) V =2V, I =1A --0.1 --0.4 --1.0 V GS DS D Drain Current I V =2V, V =0V 140* 350* A DSS DS GS Forward Transfer Admittance yfs V =2V, V =0V, f=1kHz 0.8 1.4 mS DS GS Input Capacitance Ciss 3.1 pF V =2V, V =0V, f=1MHz DS GS Reverse Transfer Capacitance Crss 0.95 pF Ta=25C, V =2.0V, R =2.2k , Cin=5pF, See speci ed Test Circuit. CC L Voltage Gain G V =10mV, f=1kHz 1.0 dB V IN Reduced Voltage Characteristic G V =10mV, f=1kHz, V =2.0V 1.5V --0.6 --2.0 dB VV IN CC Frequency Characteristic Gvf f=1kHz to 110Hz --1.0 dB Total Harmonic Distortion THD V =30mV, f=1kHz 0.65 % IN Output Noise Voltage V V =0V, A curve --106 --102 dB NO IN * : The TF252TH is classi ed by I as follows : (unit : A) DSS Rank 4 5 I 140 to 240 210 to 350 DSS Test Circuit Voltage gain Frequency Characteristic Distortion Reduced Voltage Characteristic 2.2k V =2V CC V =1.5V CC 33 F 5pF + VTVM V THD OSC Ordering Information Device Package Shipping memo TF252TH-4-TL-H VTFP 8,000pcs./reel Pb Free and Halogen Free TF252TH-5-TL-H VTFP 8,000pcs./reel No. A0842-2/7