TIG067SS IGBT www.onsemi.com ( ) 400V, 150A, V sat 3.8V Single N-Channel CE Features Low-saturation Voltage 4.0V Drive Enhancement Type Built-in Gate-to-Emitter Protection Diode High Speed Switching Pb-Free, Halogen Free and RoHS Compliance Applications Light-controlling Flash Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage (DC) V 400 V CES Collector-to-Emitter Voltage (Pulse) V PW1ms 450 V CESP Gate-to-Emitter Voltage (DC) V 6 V GES Gate-to-Emitter Voltage (Pulse) V PW1ms 8 V GESP Collector Current (Pulse) I C =600F 150 A CP M Maximum Collector-to-Emitter dv / dt dv / dt V 320V, starting Tch=25 C 1500 V / s CE 2 Allowable Power Dissipation P When mounted on FR4 substrate (11,680mm 1.6mm) 1.2 W D Channel Temperature Tch 150 C Storage Temperature Tstg -40 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) Package : SOIC8 7072-002 JEITA, JEDEC : SC-87, SOT-96 Minimum Packing Quantity : 2500 pcs./reel TIG067SS-TL-2W 4.9 0.22 8 5 Packing Type: TL Marking TIG 1 : Emitter 067 2 : Emitter TL 3 : Emitter LOT No. 14 4 : Gate 1.27 0.254 (GAGE PLANE) 0.445 5 : Collector 6 : Collector Electrical Connection 7 : Collector 5 to 8 8 : Collector SOIC8 4 1 to 3 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 Publication Order Number : 1 October 2014 - Rev. 1 TIG067SS/D 6.0 1.375 3.9 0.175 1.55 0.375 0.715TIG067SS Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector-to-Emitter Breakdown Voltage V I =2mA, V =0V 400 V (BR)CES C GE Collector-to-Emitter Cutoff Current I V =320V, V =0V 10 A CES CE GE Gate-to-Emitter Leakage Current I V =6V, V =0V 10 A GES GE CE Gate-to-Emitter Threshold Voltage V (off) V =10V, I =1mA 0.4 1.0 V GE CE C Collector-to-Emitter Saturation Voltage V (sat) I =150A, V =4V 3.8 5 V CE C GE Input Capacitance Cies 5100 pF Output Capacitance Coes V =10V, f=1MHz 59 pF CE Reverse Transfer Capacitance Cres 43 pF Fall Time t I =150A, V =320V, Resistor load V =4V, R =36W 270 ns f C CC GE G Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig1 Large Current R Load Switching Circuit R L C + M V CC R G TIG067SS 4V 100kW 0V Note1. Gate Series Resistance R 36W is recommended for protection purpose at the time of turn OFF. However, G if dv / dt 1500 / s is satisfied at customers actual set evaluation, R < 36W can also be used. G Note2. The collector voltage gradient dv / dt must be smaller than 1500V / s to protect the device when it is turned off. ORDERING INFORMATION Device Package Shipping memo TIG067SS-TL-2W SOIC8 2,500pcs./reel Pb-Free and Halogen Free www.onsemi.com 2