AUTOMOTIVE GRADE AUIRGPS4067D1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C V = 600V CES Low V Trench IGBT Technology CE (on) Low Switching Losses I = 160A T = 100C C , C 6s SCSOA G tsc 6s, T = 175C J(MAX) Square RBSOA E 100% of the parts tested for ILM V . = 1.70V CE(on) typ n-channel Positive V Temperature Coefficient CE (on) Soft Recovery Co-pak Diode Lead-Free, RoHS Compliant C Automotive Qualified * Benefits E High Efficiency in a Wide Range of Applications C G Suitable for Applications in the Low to Mid-Range Frequencies Rugged Transient Performance for Increased Reliability PG-TO274-3-903 Excellent Current Sharing in Parallel Operation Low EMI G C E Gate Collector Emitter Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity AUIRGPS4067D1 PG-TO274-3-903 Tube 25 AUIRGPS4067D1 Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress rat- ings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T ) is 25C, unless A otherwise specified. Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 240 C C I T = 100C Continuous Collector Current 160 C C I Nominal Current 120 NOMINAL I Pulse Collector Current, V = 15V 360 A CM GE I Clamped Inductive Load Current, V = 20V 480 LM GE I Diode Nominal Current 120 F NOMINAL I Diode Maximum Forward Current 480 FM V Continuous Gate-to-Emitter Voltage 20 GE V Transient Gate-to-Emitter Voltage 30 P T = 25C Maximum Power Dissipation 750 D C W P T = 100C Maximum Power Dissipation 375 D C T Operating Junction and J -55 to +175 T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance Parameter Typ. Max. Units Thermal Resistance Junction-to-Case (each IGBT) 0.20 R (IGBT) JC Thermal Resistance Junction-to-Case (each Diode) 0.44 R (Diode) JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 R JA * Qualification standards can be found at www.infineon.com 1 2018-07-19 AUIRGPS4067D1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.27 V/C V = 0V, I = 15mA (25C-175C) V /T GE C (BR)CES J 1.7 2.05 I = 120A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage V 2.15 I = 120A, V = 15V, T = 150C CE(on) C GE J 2.20 I = 120A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 5.6mA GE(th) CE GE C Threshold Voltage temp. coefficient -17 mV/C V = V , I = 20mA (25C-175C) V /TJ GE(th) CE GE C gfe Forward Transconductance 85 S V = 50V, I = 120A CE C Collector-to-Emitter Leakage Current 2.3 200 A V = 0V, V = 600V GE CE I CES 9.4 mA V = 0V, V = 600V,T = 175C GE CE J 1.9 2.2 I = 120A F V Diode Forward Voltage Drop V FM 2.0 I = 120A, T = 175C F J Gate-to-Emitter Leakage Current 100 nA V = 20V I GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 240 360 I = 120A g C Q Gate-to-Emitter Charge (turn-on) 69 104 nC V = 15V ge GE V = 400V Q Gate-to-Collector Charge (turn-on) 90 135 gc CC E Turn-On Switching Loss 8.2 10 on E Turn-Off Switching Loss 2.9 3.2 mJ off E Total Switching Loss 11.1 13.2 I = 120A, V = 400V, V = 15V total C CC GE t Turn-On delay time 69 82 R = 4. 7 , L = 87H, T = 25C d(on) G J Energy losses include tail & diode t Rise time 65 82 ns r t Turn-Off delay time 198 230 reverse recovery d(off) t Fall time 38 48 f E Turn-On Switching Loss 10 on E Turn-Off Switching Loss 3.8 off mJ E Total Switching Loss 13.8 I = 120A, V = 400V, V = 15V total C CC GE t Turn-On delay time 63 R = 4.7 , L = 87H, T = 175C d(on) G J t Rise time 64 Energy losses include tail & diode ns r t Turn-Off delay time 230 reverse recovery d(off) t Fall time 51 f C Input Capacitance 7780 V = 0V ies GE C Output Capacitance 505 pF V = 30V oes CC C Reverse Transfer Capacitance 245 f = 1.0Mhz res T = 175C, I = 480A J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp 600V CC Rg = 4.7 , V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area V = 400V, Vp 600V CC 6 s Rg = 1.0 , V = +15V to 0V GE Erec Reverse Recovery Energy of the Diode 2440 J T = 175C J V = 400V, I = 120A t Diode Reverse Recovery Time 360 ns rr CC F I Peak Reverse Recovery Current 53 A V = 15V, Rg = 4.7 , L = 87H rr GE Notes: V = 80% (V ), V = 20V, L = 0.87H, R = 50 tested in production ILM 400A. CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T approximately 90C. J Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current limit is120A. Note that current limitations arising from heating of the device leads may occur. 2 2018-07-19