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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGA5065ADF 650 V, 50 A Field Stop Trench IGBT August 2015 FGA5065ADF 650 V, 50 A Field Stop Trench IGBT Features General Description o Maximum Junction Temperature : T = 175 C This ADF IGBT series adopted field stop trench 3rd generation J IGBT which offer extreme low V and much faster switch- Positive Temperaure Co-efficient for Easy Parallel Operating CE(sat) ing characteristics for outstanding efficiency. And this kind of High Current Capability technology is fully optimized to variety PFC (Power Factor Cor- Low Saturation Voltage: V = 1.7 V(Typ.) I = 50 A CE(sat) C rection) topology Single Boost, Multi Channel Interleaved etc 100% of the Parts Tested for I (1) LM with over 20KHz switching performance. TO3P package provide High Input Impedance super low thermal resistance for much wider SOA for system stability. Fast Switching Tighten Parameter Distribution Applications RoHS Compliant PFC topology for home applicnce: Single Boost, Multi Chan- nel Interleaved etc. C G G C TO-3PN E E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description FGA5065ADF Unit V Collector to Emitter Voltage 650 V CES Gate to Emitter Voltage 20 V V GES Transient Gate to Emitter Voltage 30 V o Collector Current T = 25C100 A C I C o Collector Current T = 100C50 A C o I Pulsed Collector Current T = 25 C 150 A LM (1) C I Pulsed Collector Current 150 A CM (2) o Diode Forward Current T = 25C40 A C I F (3) o Diode Forward Current T = 100C20 A C I Pulsed Diode Maximum Forward Current 120 A FM (2) o Maximum Power Dissipation T = 25C268 W C P D o Maximum Power Dissipation T = 100C134 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1. V = 400 V, V = 15 V, I =150 A, R = 55.9 Inductive Load. CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature. 3. The purpose of diode is protection for negative voltage. 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA5065ADF Rev. 1.0