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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGA50S110P 1100 V, 50 A Shorted-anode IGBT March 2016 FGA50S110P 1100 V, 50 A Shorted-anode IGBT tm Features General Description Intrinsic Anti-parallel Diode for Soft-switching Applications Using advanced field stop trench and shorted-anode technol- ogy, Fairchilds shorted-anode trench IGBTs offer superior con- High Switching Frequency Range 10 kHz to 50kHz duction and switching performances for switching applications. o High Temperature Stable Behavior (Tjmax = 175 C) This device is tailored to induction cooker and microwave oven. Low Saturation Voltage Drop : VCE(sat) = 2.06 V IC = 50 A Robust Pot Detection Noise Immunity RoHS Compliant (Pb-free lead plating) Applications Induction Cooker, Rice-jar, and Microwave Oven Soft-switching Applications C G TO-3PN E GEC Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 1100 V CES V Gate to Emitter Voltage 25 V GES o Collector Current T = 25 C 50 A C I C o Collector Current T = 100 C 30 A C I Pulsed Collector Current 120 A CM (1) o Diode Continuous Forward Current T = 25 C 50 A C I F o Diode Continuous Forward Current T = 100 C 30 A C o Maximum Power Dissipation T = 25 C 300 W C P D o Maximum Power Dissipation T = 100 C 150 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case, Max - 0.5 C/W JC o R Thermal Resistance, Junction to Ambient, Max - 40 C/W JA Notes: 1: Limited by Tjmax 2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA50S110P Rev. 1.3