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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGAF40N60SMD 600 V, 40 A Field Stop IGBT December 2016 FGAF40N60SMD 600 V, 40 A Field Stop IGBT Features General Description o Maximum Junction Temperature : T = 175 C Using novel field stop IGBT technology, ON semiconductors J nd new series of field stop 2 generation IGBTs offer the optimum Positive Temperaure Co-efficient for easy Parallel Operating performance for solar inverter, UPS, welder and PFC applica- High Current Capability tions where low conduction and switching losses are essential. Low Saturation Voltage: V = 1.9 V(Typ.) I = 40 A CE(sat) C High Input Impedance Fast Swiching: E = 6.5 uJ/A OFF Tightened Parameter Distribution RoHS Compliant Applications Sewing Machine, CNC Home Appliances, Motor-Control C G E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES o Collector Current T = 25 C 80* A C I C o Collector Current T = 100 C 40* A C I Pulsed Collector Current 120* A CM (1) o Diode Forward Current T = 25 C 40* A C I F o Diode Forward Current T = 100 C 20* A C I Pulsed Diode Maximum Forward Current 120* A FM (1) o Maximum Power Dissipation T = 25 C 115 W C P D o Maximum Power Dissipation T = 100 C 58 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: *Drain current limited by maximum junction temperature 1: Repetitive rating: Pulse width limited by max. junction temperature Semiconductor Components Industries, LLC, 2016 www.fairchildsemi.com FGAF40N60SMD Rev. 1.4 www.onsemi.com 1