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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGD3N60UNDF 600 V, 3 A Short Circuit Rated April 2013 FGD3N60UNDF Applications 600 V, 3 A Sewing Machine, CNC, Home Appliances, Motor Control Short Circuit Rated IGBT General Description Features Using advanced NPT IGBT technology, Fairchild s the NPT Short Circuit Rated 10us IGBTs offer the optimum performance for low-power inverter- High Current Capability driven applications where low-losses and short-circuit rugged- ness features are essential. High Input Impedance Fast Switching RoHS Compliant Collector C G JEDEC TO-252 D-Pak E Gate Emitter E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES o Collector Current T = 25 C 6 A C I C o Collector Current T = 100 C 3 A C o I Pulsed Collector Current 9 A CM (1) T = 25 C C o Diode Forward Current T = 25 C 3 A C I F o Maximum Power Dissipation T = 25 C 60 W C P D o Maximum Power Dissipation T = 100 C 24 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Unit o R (IGBT) Thermal Resistance, Junction to Case 2.08 C/W JC o R (Diode) Thermal Resistance, Junction to Case 5.0 C/W JC o R Thermal Resistance, Junction to Ambient (PCB Mount)(2) 150 C/W JA Notes: 2: Mounted on 1 square PCB (FR4 or G-10 material) 2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGD3N60UNDF Rev. C1