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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGH60N60UFDTU F085 600V, 60A Field Stop IGBT April 2015 FGH60N60UFDTU F085 600V, 60A Field Stop IGBT Features General Description High Current Capability Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Automo- Low Saturation Voltage: V = 1.8 V I = 60 A CE(sat) C tive Chargers, Inverter, and other applications where low con- High Input Impedance duction and switching losses are essential. Fast Switching RoHS Compliant Qualified to Automotive Requirements of AEC-Q101 Applications Automotive chargers, Converters, High Voltage Auxiliaries Inverters, PFC, UPS E C C G G COLLECTOR E (FLANGE) Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES Gate to Emitter Voltage 20 V V GES Transient Gate-to-Emitter Voltage 30 o Collector Current T = 25 C 120 A C I o C Collector Current T = 100 C 60 A C o I Pulsed Collector Current 180 A CM (1) T = 25 C C o Maximum Power Dissipation T = 25 C 298 W C P o D = 100 C 119 W Maximum Power Dissipation T C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o C 300 T L Purposes, 1/8 from case for 5 seconds Notes: 1: Repetitive test , Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Unit o R (IGBT) Thermal Resistance, Junction to Case 0.33 C/W JC o R (Diode) Thermal Resistance, Junction to Case 1.1 C/W JC o Thermal Resistance, Junction to Ambient 40 C/W R JA 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGH60N60UFDTU F085 Rev.1.0