DATA SHEET www.onsemi.com IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHDT Description Using novel field stop IGBT technology, onsemis new series of rd E field stop 3 generation IGBTs offer the optimum performance for C solar inverter, UPS, welder, telecom, ESS and PFC applications where GG low conduction and switching losses are essential. Features Maximum Junction Temperature: T =175C J TO2473LD Positive Temperature Coefficient for Easy Parallel Operating CASE 340CH High Current Capability Low Saturation Voltage: V = 1.6 V(Typ.) I = 75 A CE(sat) C MARKING DIAGRAMS 100% of the Parts Tested for I (Note 1) LM High Input Impedance Fast Switching Y&Z&3&K Tighten Parameter Distribution FGH75T65 SHDT This Device is PbFree and is RoHS Compliant Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC Y = onsemi Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75T65SHDT = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: Spetember, 2021 Rev. 4 FGH75T65SHDT/DFGH75T65SHDT ABSOLUTE MAXIMUM RATINGS (T = 25C, unless otherwise specified) C Parameter Symbol FGH75T65SHDTF155 Unit Collector to Emitter Voltage V 650 V CES Gate to Emitter Voltage V 20 V GES Transient Gate to Emitter Voltage 30 V Collector Current T = 25C I 150 A C C Collector Current T = 100C 75 A C Pulsed Collector Current (Note 1) T = 25C I 225 A C LM Pulsed Collector Current (Note 2) I 225 A CM Diode Forward Current T = 25C I 125 A C F Diode Forward Current T = 100C 75 A C Pulsed Diode Maximum Forward Current (Note 2) I 225 A FM Maximum Power Dissipation T = 25C P 455 W C D Maximum Power Dissipation T = 100C 227 W C Operating Junction Temperature T 55 to +175 C J Storage Temperature Range T 55 to +175 C stg Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds T 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 225 A, R = 20 , Inductive Load CC GE C G 2. Repetitive Rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Characteristic Symbol FGH75T65SHDTF155 Unit Thermal Resistance, Junction to Case, Max. (IGBT) R 0.33 C/W JC Thermal Resistance, Junction to Case, Max. (Diode) R 0.65 C/W JC Thermal Resistance, Junction to Ambient, Max. R 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH75T65SHDTF155 FGH75T65SHDT TO2473LD Tube 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Collector to Emitter Breakdown Voltage BV V = 0 V, I = 1 mA 650 V CES GE C Temperature Coefficient of Breakdown BV / T I = 1 mA, Reference to 25C 0.6 V/C CES J C Voltage Collector CutOff Current I V = V , V = 0 V 250 A CES CE CES GE GE Leakage Current I V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICS GE Threshold Voltage V I = 75 mA, V = V 4.0 5.5 7.5 V GE(th) C CE GE Collector to Emitter Saturation Voltage V I = 75 A, V = 15 V 1.6 2.1 V CE(sat) C GE I = 75 A, V = 15 V, T = 175C 2.28 V C GE C www.onsemi.com 2