FGH75T65SHDT 650 V, 75 A Field Stop Trench IGBT FGH75T65SHDT 650 V, 75 A Field Stop Trench IGBT Features General Description o Using novel field stop IGBT technology, ON Semiconductors new Maximum Junction Temperature: T = 175 C J rd series of field stop 3 generation IGBTs offer the optimum Positive Temperature Co-efficient for Easy Parallel Operating performance for solar inverter, UPS, welder, telecom, ESS and High Current Capability PFC applica-tions where low conduction and switching losses Low Saturation Voltage: V = 1.6 V(Typ.) I = 75 A CE(sat) C are essential. 100% of the Parts Tested for I (1) LM Applications High Input Impedance Solar Inverter, UPS, Welder, Telecom, ESS, PFC Fast Switching Tighten Parameter Distribution RoHS Compliant C G G TO-247 C E E long leads Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description FGH75T65SHDT-F155 Unit V Collector to Emitter Voltage 650 V CES Gate to Emitter Voltage 20 V V GES Transient Gate to Emitter Voltage 30 V o Collector Current T = 25 C 150 A C I C o Collector Current T = 100 C 75 A C o I Pulsed Collector Current T = 25 C 225 A LM (1) C I Pulsed Collector Current 225 A CM (2) o Diode Forward Current T = 25 C 125 A C I F o Diode Forward Current T = 100 C 75 A C I Pulsed Diode Maximum Forward Current 225 A FM (2) o Maximum Power Dissipation T = 25 C 455 W C P D o Maximum Power Dissipation T = 100 C 227 W C o T Operating Junction Temperature -55 to +175 C J o T Storage Temperature Range -55 to +175 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1. V = 400 V, V = 15 V, I = 225 A, R = 20 , Inductive Load CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature 2015 Semiconductor Components Industries, LLC. Publication Order Number: FGH75T65SHDT-F155/D September-2017, Rev. 2FGH75T65SHDT 650 V, 75 A Field Stop Trench IGBT Thermal Characteristics Symbol Parameter FGH75T65SHDT-F155 Unit o R (IGBT) Thermal Resistance, Junction to Case, Max. 0.33 C/W JC o R (Diode) Thermal Resistance, Junction to Case, Max. 0.65 C/W JC o R Thermal Resistance, Junction to Ambient, Max. 40 C/W JA Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FGH75T65SHDT-155 FGH75T65SHDT TO-247 G03 Tube - - 30 Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Unit Off Characteristics BV Collector to Emitter Breakdown Voltage V = 0V, I = 1 mA 650 - - V CES GE C BV / Temperature Coefficient of Breakdown CES o o I = 1 mA, Reference to 25 C - 0.6 - V/ C C T Voltage J I Collector Cut-Off Current V = V , V = 0 V - - 250 A CES CE CES GE I G-E Leakage Current V = V , V = 0 V - - 400 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 75 mA, V = V 4.0 5.5 7.5 V GE(th) C CE GE I = 75 A, V = 15 V - 1.6 2.1 V C GE V Collector to Emitter Saturation Voltage CE(sat) I = 75 A, V = 15 V, C GE - 2.28 - V o T = 175 C C Dynamic Characteristics C Input Capacitance - 3680 - pF ies V = 30 V V = 0 V, CE , GE C Output Capacitance - 179 - pF oes f = 1MHz C Reverse Transfer Capacitance - 43 - pF res Switching Characteristics t Turn-On Delay Time - 28 - ns d(on) t Rise Time - 61 - ns r t Turn-Off Delay Time - 86 - ns d(off) V = 400 V, I = 75 A, CC C R = 3 , V = 15 V, t Fall Time G GE - 16 - ns f o Inductive Load, T = 25 C C E Turn-On Switching Loss - 3 - mJ on E Turn-Off Switching Loss - 0.75 - mJ off E Total Switching Loss - 3.75 - mJ ts t Turn-On Delay Time - 27 - ns d(on) t Rise Time - 62 - ns r t Turn-Off Delay Time - 93 - ns d(off) V = 400 V, I = 75 A, CC C R = 3 , V = 15 V, t Fall Time G GE - 16 - ns f o Inductive Load, T = 175 C C E Turn-On Switching Loss - 4.7 - mJ on E Turn-Off Switching Loss - 1.03 - mJ off E Total Switching Loss - 5.73 - mJ ts www.onsemi.com 2