IGBT - Field Stop, Trench 650 V, 75 A FGH75T65SHDTL4 Description Using novel field stop IGBT technology, ON Semiconductors new rd series of field stop 3 generation IGBTs offer the optimum www.onsemi.com performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. V I CES C Features 650 V 75 A Maximum Junction Temperature: T =175C J C Positive Temperature Coefficient for Easy Parallel Operating High Current Capability E1: Kelvin Emitter Low Saturation Voltage: V = 1.6 V (Typ.) I = 75 A CE(sat) C E2: Power Emitter 100% of the Parts Tested for I LM G High Input Impedance Fast Switching E1 E2 Tighten Parameter Distribution This Device is PbFree and is RoHS Compliant Do Not Recommend for Reflow and Full PKG Dipping Applications Solar Inverter, UPS, Welder, Telecom, ESS, PFC C E2 E1 G TO2474LD CASE 340CJ MARKING DIAGRAM Y&Z&3&K FGH75T65 SHDTL4 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH75T65SHDTL4 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: December, 2019 Rev. 2 FGH75T65SHDTL4/DFGH75T65SHDTL4 ABSOLUTE MAXIMUM RATINGS Symbol Description FGH75T65SHDTL4 Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C 150 A C C T = 100C 75 A C I (Note 1) Pulsed Collector Current T = 25C 300 A LM C I (Note 2) Pulsed Collector Current 300 A CM I Diode Forward Current T = 25C 125 A F C Diode Forward Current T = 100C 75 A C I (Note 2) Pulsed Diode Maximum Forward Current 300 A FM P Maximum Power Dissipation T = 25C 455 W D C T = 100C 227 W C T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V = 400 V, V = 15 V, I = 300 A, R = 73 , Inductive Load. CC GE C G 2. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter FGH75T65SHDTL4 Unit R (IGBT) Thermal Resistance, Junction to Case, Max. 0.33 C/W JC R (Diode) Thermal Resistance, Junction to Case, Max. 0.65 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Quantity FGH75T65SHDTL4 FGH75T65SHDTL4 TO2474LD Tube 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BV Collector to Emitter Breakdown Voltage V = 0 V, I = 1 mA 650 V CES GE C BV / Temperature Coefficient of Breakdown Voltage I = 1 mA, Reference to 25C 0.65 V/C CES C T J I Collector CutOff Current V = V , V = 0 V 250 A CES CE CES GE I GE Leakage Current V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICS V GE Threshold Voltage I = 75 mA, V = V 4.0 5.5 7.5 V GE(th) C CE GE V Collector to Emitter Saturation Voltage I = 75 A, V = 15 V 1.6 2.1 V CE(sat) C GE 2.28 V I = 75 A, V = 15 V, C GE T = 175C C www.onsemi.com 2