IGBT - Field Stop 600 V, 40 A FGH80N60FD2 Description Using novel field stop IGBT technology, ON Semiconductors field stop IGBTs offer the optimum performance for induction heating and www.onsemi.com PFC applications where low conduction and switching losses are essential. V I CES C Features 600 V 40 A High Current Capability Low Saturation Voltage: V = 1.8 V (Typ.) I = 40 A C CE(sat) C High Input Impedance Fast Switching This Device is PbFree and is RoHS Compliant G Applications Induction Heating, PFC E E C G COLLECTOR (FLANGE) TO2473LD CASE 340CK MARKING DIAGRAM Y&Z&3&K FGH80N60 FD2 Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code FGH80N60FD2 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: February, 2020 Rev. 3 FGH80N60FD2/DFGH80N60FD2 ABSOLUTE MAXIMUM RATINGS Symbol Description Ratings Unit V Collector to Emitter Voltage 600 V CES V GateEmitter Voltage 20 V GES I Collector Current T = 25C 80 A C C T = 100C 40 A C I (Note 1) Pulsed Collector Current T = 25C 160 A CM C P Maximum Power Dissipation T = 25C 290 W D C T = 100C 116 W C T Operating Junction Temperature 55 to +150 C J T Storage Temperature Range 55 to +150 C STG T Maximum Lead Temp. for Soldering Purposes, 1/8 from Case for 5 Seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: Pulse width limited by max. junction temperature. THERMAL CHARACTERISTICS Symbol Parameter Typ. Max. Unit R (IGBT) Thermal Resistance, Junction to Case 0.43 C/W JC R (Diode) Thermal Resistance, Junction to Case 1.45 C/W JA R Thermal Resistance, Junction to Ambient 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Packing Method Part Number Top Mark Package Reel Size Tape Width Quantity FGH80N60FD2TU FGH80N60FD2 TO247 Tube N/A N/A 30 ELECTRICAL CHARACTERISTICS OF THE IGBT (T = 25C unless otherwise noted) C Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BV CollectorEmitter Breakdown Voltage V = 0 V, I = 250 A 600 V CES GE C BV / T Temperature Coefficient of Breakdown Voltage V = 0 V, I = 250 A 0.6 V/C CES J GE C A I Collector CutOff Current V = V , V = 0 V 250 CES CE CES GE I GE Leakage Current V = V , V = 0 V 400 nA GES GE GES CE ON CHARACTERISTICS V GE Threshold Voltage I = 250 A, V = V 4.5 5.5 7.0 V GE(th) C CE GE V Collector to Emitter Saturation Voltage CE(sat) I = 40 A, V = 15 V, 1.8 2.4 V C GE I = 40 A, V = 15 V, C GE 2.05 V T = 125C C DYNAMIC CHARACTERISTICS V = 30 V, V = 0 V, C Input Capacitance 2110 pF CE GE ies f = 1 MHz C Output Capacitance 200 pF oes C Reverse Transfer Capacitance 60 pF res www.onsemi.com 2