FGL40N120AND 1200V NPT IGBT February 2008 tm FGL40N120AND 1200V NPT IGBT Features Description High speed switching Employing NPT technology, Fairchilds AND series of IGBTs provides low conduction and switching losses. The AND series Low saturation voltage : V = 2.6 V I = 40A CE(sat) C offers an solution for application such as induction heating (IH), High input impedance motor control, general purpose inverters and uninterruptible power supplies (UPS). CO-PAK, IGBT with FRD : t = 75ns (typ.) rr Applications Induction Heating, UPS, AC & DC motor controls and general purpose inverters. C G TO-264 E GC E Absolute Maximum Ratings Symbol Parameter FGL40N120AND Units V Collector-Emitter Voltage 1200 V CES V Gate-Emitter Voltage 25 V GES Collector Current T = 25 C64 A C I C Collector Current T = 100 C40 A C I Pulsed Collector Current 160 A CM(1) I Diode Continuous Forward Current T = 100 C40 A F C I Diode Maximum Forward Current 240 A FM Maximum Power Dissipation T = 25 C 500 W C P D Maximum Power Dissipation T = 100 C 200 W C Short Circuit Withstand Time, SCWT 10 s V = 600V, V = 15V, T = 125 C CE GE C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C STG Maximum Lead Temp. for Soldering T 300 C L Purposes, 1/8 from Case for 5 seconds Notes: (1) Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R (IGBT) Thermal Resistance, Junction-to-Case -- 0.25 C/W JC R (DIODE) Thermal Resistance, Junction-to-Case -- 0.7 C/W JC R Thermal Resistance, Junction-to-Ambient -- 25 C/W JA 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGL40N120AND Rev. A2FGL40N120AND 1200V NPT IGBT Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FGL40N120AND FGL40N120AND TO-264 - - 25 Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Conditions Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage V = 0V, I = 1mA 1200 -- -- V CES GE C BV / Temperature Coefficient of Breakdown CES V = 0V, I = 1mA -- 0.6 -- V/ C GE C T Voltage J I Collector Cut-Off Current V = V , V = 0V -- -- 1 mA CES CE CES GE I G-E Leakage Current V = V , V = 0V -- -- 250 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 250 A, V = V 3.5 5.5 7.5 V GE(th) C CE GE I = 40A, V = 15V -- 2.6 3.2 V C GE Collector to Emitter I = 40A, V = 15V, C GE V -- 2.9 -- V CE(sat) Saturation Voltage T = 125 C C I = 64A, V = 15V -- 3.15 -- V C GE Dynamic Characteristics C Input Capacitance -- 3200 -- pF ies V = 30V, V = 0V CE GE C Output Capacitance -- 370 -- pF oes f = 1MHz c Reverse Transfer Capacitance -- 125 -- pF res Switching Characteristics t Turn-On Delay Time -- 15 -- ns d(on) t Rise Time -- 20 -- ns r t Turn-Off Delay Time -- 110 -- ns d(off) V = 600V, I = 40A, CC C t Fall Time R = 5 , V = 15V, -- 40 80 ns f G GE Inductive Load, T = 25 C C E Turn-On Switching Loss -- 2.3 3.45 mJ on E Turn-Off Switching Loss -- 1.1 1.65 mJ off E Total Switching Loss -- 3.4 5.1 mJ ts t Turn-On Delay Time -- 20 -- ns d(on) t Rise Time -- 25 -- ns r t Turn-Off Delay Time -- 120 -- ns d(off) V = 600V, I = 40A, CC C t Fall Time R = 5 , V = 15V, -- 45 -- ns f G GE Inductive Load, T = 125 C C E Turn-On Switching Loss -- 2.5 -- mJ on E Turn-Off Switching Loss -- 1.8 -- mJ off E Total Switching Loss -- 4.3 -- mJ ts Q Total Gate charge -- 220 330 nC g V = 600V, I = 40A, CE C Q Gate-Emitter Charge -- 25 38 nC ge V = 15V GE Q Gate-Collector Charge -- 130 195 nC gc 2 www.fairchildsemi.com FGL40N120AND Rev. A2