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This literature is subject to all applicable copyright laws and is not for resale in any manner.FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT March 2014 FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features General Description High Speed Switching Using Fairchild s proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction Low Saturation Voltage: V = 2.5 V I = 60 A CE(sat) C and switching performances, high avalanche ruggedness and High Input Impedance easy parallel operation. This device offers the optimum perfor- Built-in Fast Recovery Diode mance for hard switching application such as UPS, welder applications. Applications UPS, Welder C G TO-264 3L G C E E Absolute Maximum Ratings Symbol Description Ratings Unit V Collector to Emitter Voltage 1000 V CES V Gate to Emitter Voltage 25 V GES o Collector Current 60 A T = 25 C C I C o Collector Current 42 A T = 100 C C o I Pulsed Collector Current 200 A CM (1) T = 25 C C o I 15 A Diode Continuous Forward Current F T = 100 C C o Maximum Power Dissipation T = 25C180 W C P D o Maximum Power Dissipation T = 100C72 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Ratings Unit o R (IGBT) Thermal Resistance, Junction to Case 0.69 C/W JC o R (Diode) Thermal Resistance, Junction to Case 2.08 C/W JC o R Thermal Resistance, Junction to Ambient 25 C/W JA 2000 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGL60N100BNTD Rev. 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