FGP5N60UFD 600V, 5A Field Stop IGBT October 2008 FGP5N60UFD tm 600V, 5A Field Stop IGBT Features General Description High current capability Using Novel Field Stop IGBT Technology, Fairchilds new series of Field Stop IGBTs offer the optimum performance for Induction Low saturation voltage: V =1.9V I = 5A CE(sat) C Heating, UPS, SMPS, and PFC applications where low conduc- High input impedance tion and switching losses are essential. Fast switching RoHS compliant Applications Induction Heating, UPS, SMPS, PFS C G TO-220 1 E 1.Gate 2.Collector 3.Emitter Absolute Maximum Ratings Symbol Description Ratings Units V Collector to Emitter Voltage 600 V CES V Gate to Emitter Voltage 20 V GES o Collector Current T = 25C10 A C I C o Collector Current T = 100C5 A C o I Pulsed Collector Current 15 A CM (1) T = 25 C C o Maximum Power Dissipation T = 25C81 W C P D o Maximum Power Dissipation T = 100C32 W C o T Operating Junction Temperature -55 to +150 C J o T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for soldering o T 300 C L Purposes, 1/8 from case for 5 seconds Notes: 1: Repetitive rating: Pulse width limited by max. juntion temperature Thermal Characteristics Symbol Parameter Typ. Max. Units o R (IGBT) Thermal Resistance, Junction to Case - 1.55 C/W JC o R (Diode) Thermal Resistance, Junction to Case - 3.2 C/W JC o R Thermal Resistance, Junction to Ambient - 62.5 C/W JA 2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGP5N60UFD Rev. AFGP5N60UFD 600V, 5A Field Stop IGBT Package Marking and Ordering Information Max Qty Packaging Device Marking Device Package Type Qty per Tube per Box FGP5N60UFD FGP5N60UFDTU TO-220 Tube 50ea - Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV Collector to Emitter Breakdown Voltage V = 0V, I = 250 A 600 - - V CES GE C BV Temperature Coefficient of Breakdown CES o V = 0V, I = 250 A -0.7 - V/ C GE C T Voltage J o I Collector Cut-Off Current V = V , V = 0V, T = 25 C - - 250 A CES CE CES GE C V = V , V = 0V, -- 1 mA CE CES GE o T = 125 C C I G-E Leakage Current V = V , V = 0V - - 400 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 250 A, V = V 4.05.06.5 V GE(th) C CE GE I = 5A, V = 15V -1.9 2.4 V C GE V Collector to Emitter Saturation Voltage CE(sat) I = 5A, V = 15V, C GE -2.1 - V o T = 125 C C Dynamic Characteristics C Input Capacitance - 290 - pF ies V = 30V V = 0V, CE , GE C Output Capacitance - 40 - pF oes f = 1MHz C Reverse Transfer Capacitance - 10 - pF res Switching Characteristics t Turn-On Delay Time -6 - ns d(on) t Rise Time - 8 - ns r t Turn-Off Delay Time - 44 - ns d(off) V = 400V, I = 5A, CC C R = 20 , V = 15V, t Fall Time G GE - 20 ns f o Inductive Load, T = 25 C C E Turn-On Switching Loss - 0.075 - mJ on E Turn-Off Switching Loss - 0.059 - mJ off E Total Switching Loss - 0.134 - mJ ts t Turn-On Delay Time -8 - ns d(on) t Rise Time - 11 - ns r t Turn-Off Delay Time - 48 - ns d(off) V = 400V, I = 5A, CC C R = 20 , V = 15V, t Fall Time G GE - 30 - ns f o Inductive Load, T = 125 C C E Turn-On Switching Loss - 0.077 - mJ on E Turn-Off Switching Loss - 0.082 - mJ off E Total Switching Loss - 0.159 - mJ ts Q Total Gate Charge -19.5 - nC g V = 400V, I = 5A, CE C Q Gate to Emitter Charge - 2.5 - nC ge V = 15V GE Q Gate to Collector Charge - 10.5 - nC gc 2 www.fairchildsemi.com FGP5N60UFD Rev. A