SGL160N60UF IGBT SGL160N60UF Ultra-Fast IGBT General Description Features Fairchild s UF series of Insulated Gate Bipolar Transistors High speed switching (IGBTs) provides low conduction and switching losses. Low saturation voltage : V (sat) = 2.1 V I = 80A CE C The UF series is designed for applications such as motor High input impedance control and general inverters where high speed switching is a required feature. Applications AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies. CC GG TO-264 EE G C E Absolute Maximum Ratings T = 25C unless otherwise noted C Symbol Description SGL160N60UF Units V Collector-Emitter Voltage 600 V CES V Gate-Emitter Voltage 20 V GES Collector Current T = 25C 160 A C I C Collector Current T = 100C80 A C I Pulsed Collector Current 300 A CM (1) P Maximum Power Dissipation T = 25C 250 W D C Maximum Power Dissipation T = 100C 100 W C T Operating Junction Temperature -55 to +150 C J T Storage Temperature Range -55 to +150 C stg Maximum Lead Temp. for Soldering T 300 C L Purposes, 1/8 from Case for 5 Seconds Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol Parameter Typ. Max. Units R Thermal Resistance, Junction-to-Case -- 0.5 C/W JC R Thermal Resistance, Junction-to-Ambient -- 25 C/W JA 2002 Fairchild Semiconductor Corporation SGL160N60UF Rev. A1SGL160N60UF Electrical Characteristics of the IGBT T = 25C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage V = 0V, I = 250uA 600 -- -- V CES GE C B / Temperature Coefficient of Breakdown VCES V = 0V, I = 1mA -- 0.6 -- V/C GE C T Voltage J I Collector Cut-Off Current V = V , V = 0V -- -- 250 uA CES CE CES GE I G-E Leakage Current V = V , V = 0V -- -- 100 nA GES GE GES CE On Characteristics V G-E Threshold Voltage I = 80mA, V = V 3.5 4.5 6.5 V GE(th) C CE GE I = 80A, V = 15V -- 2.1 2.6 V Collector to Emitter C GE V CE(sat) Saturation Voltage I = 160A, V = 15V -- 2.6 -- V C GE Dynamic Characteristics C Input Capacitance -- 5000 -- pF ies V = 30V V = 0V, CE , GE C Output Capacitance -- 600 -- pF oes f = 1MHz C Reverse Transfer Capacitance -- 200 -- pF res Switching Characteristics t Turn-On Delay Time -- 40 -- ns d(on) t Rise Time -- 101 -- ns r t Turn-Off Delay Time -- 90 130 ns V = 300 V, I = 80A, d(off) CC C t Fall Time R = 3.9 , V =15V -- 75 150 ns f G GE Inductive Load, T = 25C E Turn-On Switching Loss -- 2500 -- uJ C on E Turn-Off Switching Loss -- 1760 -- uJ off E Total Switching Loss -- 42605000 uJ ts t Turn-On Delay Time -- 45 -- ns d(on) t Rise Time -- 105 -- ns r t Turn-Off Delay Time -- 140 200 ns V = 300 V, I = 80A, d(off) CC C t Fall Time R = 3.9 , V = 15V -- 122 250 ns f G GE Inductive Load, T = 125C E Turn-On Switching Loss -- 2785 -- uJ C on E Turn-Off Switching Loss -- 3100 -- uJ off E Total Switching Loss -- 5885 -- uJ ts Q Total Gate Charge -- 345 520 nC g V = 300 V, I = 80A, CE C Q Gate-Emitter Charge -- 60 100 nC ge V = 15V GE Q Gate-Collector Charge -- 95 150 nC gc L Internal Emitter Inductance Measured 5mm from PKG -- 18 -- nH e 2002 Fairchild Semiconductor Corporation SGL160N60UF Rev. A1